GaInP纳米线轴向异质结构的形成

2020 International Conference Laser Optics (ICLO) Pub Date : 2020-11-02 DOI:10.1109/ICLO48556.2020.9285852

A. Koryakin, V. Dubrovskii

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引用次数: 0

摘要

本文介绍了在自催化GaInP纳米线中形成InP/GaInP轴向异质结构的模拟结果。该模型考虑了由于单分子层之间晶格不匹配而产生的弹性应力。计算了不同生长条件下InP/GaInP异质结构的组成曲线。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Axial heterostructure formation in GaInP nanowires

In this paper we present the results of modeling of InP/GaInP axial heterostructure formation in self-catalyzed GaInP nanowires. The elastic stresses produced due to the lattice mismatch between monolayers are considered in the model. The composition profiles of the InP/GaInP heterostructure are calculated for different growth conditions of GaInP nanowire growth.

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2020 International Conference Laser Optics (ICLO)

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