电容并联RF-MEMS开关的电磁兼容抗扰度试验

B. Jmai, A. Rajhi, A. Gharsallah
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引用次数: 2

摘要

射频微机电系统(RF MEMS)具有紧凑的几何形状,在单片微波集成电路(MMIC)中非常常用,用于不同的重要应用。通过降低电磁干扰,提高器件的电磁兼容性和抗EMC能力,从而提高其有效性。本文介绍了RF-MEMS在硅(Si)、砷化镓(GaAs)和碳化硅(SiC)不同衬底情况下的电磁兼容抗扰度测试。该MEMS结构是利用电磁求解器HFSS(高频结构)在MEMS元件周围诱发电磁辐射的外部寄生线形成的;为了分析MEMS模拟器的电磁测试抗扰度,采用有限元法进行仿真。对于不同的衬底,进行了电场和磁场的比较研究。我们还研究了射频线上的表面电流密度。结果表明,SiC材料在抗扰度测试中比Si和GaAs衬底具有更好的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
EMC immunity test for capacitive shunt RF-MEMS switch
The Radio Frequency Micro-electromechanical system (RF MEMS) has compact geometries and are very used in Monolithic Microwave Integrate Circuit (MMIC) for different important applications with respect to their size and their effectiveness. Its effectiveness can be improved by reducing the Electro Magnetic Interference EMI problem with better Electromagnetic compatibility EMC immunity of the component. This work presents the EMC immunity testing of RF-MEMS for different substrate cases Silicon (Si), Gallium Arsenide (GaAs) and Silicon Carbide (SiC). This MEMS structure is exited by used the electromagnetic solver HFSS (high frequency structural an external parasite line which will induce an EM radiation around the MEMS component; In order to analyze the EM test immunity of the MEMS we simulator) based on finite element method for simulation. For the different substrates, a comparative study of the electric and magnetic fields is exposed and discussed. We have investigated also on the surface current densities on the RF line. The results show that the material SiC has better performances in the immunity test than Si and GaAs substrates.
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