CMOS差分变增益低噪声放大器的直流不变增益控制技术

M. Wei, Sheng-Fuh Chang, R. Negra
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引用次数: 3

摘要

介绍了差分CMOS变增益低噪声放大器(VG-LNA)的直流不变增益控制技术。当射频功率增益在增益控制范围内调谐时,该技术具有直流偏置电流不变的优点。因此,NMOS晶体管的跨导保持不变,从而使输入匹配失谐最小化。因此,噪声、增益和功率线性的最佳设计变得更容易实现。当射频功率增益从0调谐到12.3 dB时,所实现的0.18µm CMOS VG-LNA在1.5 V电源下的直流电流几乎恒定,为7.8±0.5 mA。在此增益调谐范围内,输入返回损耗几乎在11.5 dB左右不变。最小噪声系数为2.59 dB,对应于高增益(12.3 dB)情况,输入参考P1dB为- 4.5 dBm。带内增益平坦度为±0.2 dB。得到了20.6的非常高的FOM。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A DC-invariant gain control technique for CMOS differential variable-gain low-noise amplifiers
A DC-invariant gain control technique is introduced for differential CMOS variable-gain low-noise amplifiers (VG-LNA). Such technique provides an advantage of invariant DC bias current when the RF power gain is tuned over the gain control range. Therefore, the transconductance of NMOS transistor is unchanged, which minimizes the input match detuning. Consequently, the optimal design for noise, gain and power linearity becomes easier to achieve. The implemented 0.18 µm CMOS VG-LNA shows a nearly constant DC current of 7.8±0.5 mA from a 1.5 V supply when the RF power gain is tuned from 0 to 12.3 dB at 3.5 GHz. Over this gain tuning range, the input return loss is almost unchanged around 11.5 dB. The minimum noise figure is 2.59 dB and the input-referred P1dB is −4.5 dBm corresponding to the high gain (12.3 dB) situation. The in-band gain flatness is as flat as ±0.2 dB. A very high FOM of 20.6 is obtained.
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