{"title":"基于SiGe基带HBT的10gbps光接收机9ghz前置放大器","authors":"B. Ryum, D. Cho, S.-M. Lee, T. Han","doi":"10.1109/ESSDERC.1997.194439","DOIUrl":null,"url":null,"abstract":"Using an arsenic-implanted polysilicon-emitter/reduced pressure (RP) CVD-grown SiGe-base heterojunction bipolar transistor (HBT), a 9GHz-bandwidth preamplifier in a 10Gbps optical receiver has been developed. The SiGe HBT exhibits a common-emitter current gain (β) of 268, a collector-emitter breakdown voltage (BVCEO) of 3.5V, a cutoff frequency (fT) of 52GHz, and a maximum oscillation frequency (fmax) of 32GHz. For the preamplifier, trans-impedance gain (Z21) is 45dBΩ at a DC supply voltage of 5.5V and a supply current of 14mA.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 9 GHz Bandwith Preamplifier in 10 Gbps Optical Receiver Using SiGe Base HBT\",\"authors\":\"B. Ryum, D. Cho, S.-M. Lee, T. Han\",\"doi\":\"10.1109/ESSDERC.1997.194439\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using an arsenic-implanted polysilicon-emitter/reduced pressure (RP) CVD-grown SiGe-base heterojunction bipolar transistor (HBT), a 9GHz-bandwidth preamplifier in a 10Gbps optical receiver has been developed. The SiGe HBT exhibits a common-emitter current gain (β) of 268, a collector-emitter breakdown voltage (BVCEO) of 3.5V, a cutoff frequency (fT) of 52GHz, and a maximum oscillation frequency (fmax) of 32GHz. For the preamplifier, trans-impedance gain (Z21) is 45dBΩ at a DC supply voltage of 5.5V and a supply current of 14mA.\",\"PeriodicalId\":424167,\"journal\":{\"name\":\"27th European Solid-State Device Research Conference\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"27th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.1997.194439\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194439","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
摘要
利用砷注入多晶硅发射极/ RP (RP) cvd生长硅基异质结双极晶体管(HBT)，在10Gbps光接收机上开发了9ghz带宽的前置放大器。SiGe HBT共发射极电流增益(β)为268，集电极-发射极击穿电压(BVCEO)为3.5V，截止频率(fT)为52GHz，最大振荡频率(fmax)为32GHz。对于前置放大器，在5.5V直流供电电压和14mA供电电流下，反阻抗增益(Z21)为45dBΩ。
A 9 GHz Bandwith Preamplifier in 10 Gbps Optical Receiver Using SiGe Base HBT
Using an arsenic-implanted polysilicon-emitter/reduced pressure (RP) CVD-grown SiGe-base heterojunction bipolar transistor (HBT), a 9GHz-bandwidth preamplifier in a 10Gbps optical receiver has been developed. The SiGe HBT exhibits a common-emitter current gain (β) of 268, a collector-emitter breakdown voltage (BVCEO) of 3.5V, a cutoff frequency (fT) of 52GHz, and a maximum oscillation frequency (fmax) of 32GHz. For the preamplifier, trans-impedance gain (Z21) is 45dBΩ at a DC supply voltage of 5.5V and a supply current of 14mA.
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