一个自给自足的数字控制环形振荡器补偿电源电压变化

M. Terosiet, S. Feruglio, F. Vallette, P. Garda, O. Romain, J. Kernec
{"title":"一个自给自足的数字控制环形振荡器补偿电源电压变化","authors":"M. Terosiet, S. Feruglio, F. Vallette, P. Garda, O. Romain, J. Kernec","doi":"10.1109/ICECS.2011.6122318","DOIUrl":null,"url":null,"abstract":"A self-sufficient Giga-Hertz digitally controlled ring oscillator for clock distribution network is presented in this paper. It features a high supply insensitivity in order to mitigate the additional jitter due to supply noise. This is achieved by inducing a mutual compensation between the oscillation frequency parameters that are affected by the supply voltage variations. The proposed method can be easily implemented and takes advantage of the deep sub-micrometer effects peculiar to topical CMOS technologies. We demonstrate by simulations that this approach remains efficient over process variations despite the reliability issue of short channel MOS transistors.","PeriodicalId":251525,"journal":{"name":"2011 18th IEEE International Conference on Electronics, Circuits, and Systems","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A self-sufficient digitally controlled ring oscillator compensated for supply voltage variation\",\"authors\":\"M. Terosiet, S. Feruglio, F. Vallette, P. Garda, O. Romain, J. Kernec\",\"doi\":\"10.1109/ICECS.2011.6122318\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A self-sufficient Giga-Hertz digitally controlled ring oscillator for clock distribution network is presented in this paper. It features a high supply insensitivity in order to mitigate the additional jitter due to supply noise. This is achieved by inducing a mutual compensation between the oscillation frequency parameters that are affected by the supply voltage variations. The proposed method can be easily implemented and takes advantage of the deep sub-micrometer effects peculiar to topical CMOS technologies. We demonstrate by simulations that this approach remains efficient over process variations despite the reliability issue of short channel MOS transistors.\",\"PeriodicalId\":251525,\"journal\":{\"name\":\"2011 18th IEEE International Conference on Electronics, Circuits, and Systems\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 18th IEEE International Conference on Electronics, Circuits, and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS.2011.6122318\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 18th IEEE International Conference on Electronics, Circuits, and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2011.6122318","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

介绍了一种用于时钟配电网的自适应千兆赫数字控制环形振荡器。它具有高电源不灵敏度,以减轻由于电源噪声引起的额外抖动。这是通过诱导受电源电压变化影响的振荡频率参数之间的相互补偿来实现的。该方法易于实现,并且利用了当前CMOS技术特有的深度亚微米效应。我们通过仿真证明,尽管短沟道MOS晶体管存在可靠性问题,但这种方法在工艺变化时仍然有效。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A self-sufficient digitally controlled ring oscillator compensated for supply voltage variation
A self-sufficient Giga-Hertz digitally controlled ring oscillator for clock distribution network is presented in this paper. It features a high supply insensitivity in order to mitigate the additional jitter due to supply noise. This is achieved by inducing a mutual compensation between the oscillation frequency parameters that are affected by the supply voltage variations. The proposed method can be easily implemented and takes advantage of the deep sub-micrometer effects peculiar to topical CMOS technologies. We demonstrate by simulations that this approach remains efficient over process variations despite the reliability issue of short channel MOS transistors.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信