基于SiC mosfet和Si igbt的中点箝位变换器的功率损耗分析

2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC) Pub Date : 2021-04-25 DOI:10.1109/PEMC48073.2021.9432609

J. Stefanik, M. Zygmanowski

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引用次数: 2

摘要

本文的目的是评估先进的中性点箝位(ANPC)转换器，每个单相腿有两个SiC mosfet和四个Si igbt。重点放在高开关频率的工作能力上。给出了开关频率为30khz的ANPC变换器的功率损耗计算结果。评估了开关和传导损耗，以及半导体器件之间的功率损耗分布。结果与传统的中性点箝位(NPC)变换器进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Power Loss Analysis of Advanced-Neutral-Point-Clamped Converter with SiC MOSFETs and Si IGBTs

The aim of the paper is the evaluation of the advanced-neutral-point-clamped (ANPC) converter with two SiC MOSFETs and four Si IGBTs per a single phase leg. The main focus is put on the high switching frequency operation capability. Power loss calculation results of ANPC converter operating with 30 kHz switching frequency are presented. Both switching and conduction losses are evaluated, as well as power loss distribution among semiconductor devices. The results are compared to the conventional neutral-point-clamped (NPC) converter.

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2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC)

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