忆阻电路的cad仿真方法

A. Sarmiento-Reyes, Jesús Jiménez-León, L. Hernández-Martínez, H. Vázquez-Leal
{"title":"忆阻电路的cad仿真方法","authors":"A. Sarmiento-Reyes, Jesús Jiménez-León, L. Hernández-Martínez, H. Vázquez-Leal","doi":"10.1109/LASCAS.2016.7451020","DOIUrl":null,"url":null,"abstract":"With the fabrication of the nanometric memristor in 2008, a large number of applications in electronic design have been devised for the new device. Despite the current problems involved in its fabrication, the memristor is considered to be the basic circuit cell for the development of modern electronic systems. Unquestionably, it is necessary to develop circuit design verification methodologies and CAD tools for circuits containing memristors as well as traditional electronics. In this paper, we present a circuit simulation methodology for the electrical simulation of memristive circuits. The methodology results in a nonlinear constitutive branch relationship for the memristor that can be straightforwardly combined with models for traditional components in a standard industry package for electrical simulation.","PeriodicalId":129875,"journal":{"name":"2016 IEEE 7th Latin American Symposium on Circuits & Systems (LASCAS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A CAD-oriented simulation methodology for memristive circuits\",\"authors\":\"A. Sarmiento-Reyes, Jesús Jiménez-León, L. Hernández-Martínez, H. Vázquez-Leal\",\"doi\":\"10.1109/LASCAS.2016.7451020\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With the fabrication of the nanometric memristor in 2008, a large number of applications in electronic design have been devised for the new device. Despite the current problems involved in its fabrication, the memristor is considered to be the basic circuit cell for the development of modern electronic systems. Unquestionably, it is necessary to develop circuit design verification methodologies and CAD tools for circuits containing memristors as well as traditional electronics. In this paper, we present a circuit simulation methodology for the electrical simulation of memristive circuits. The methodology results in a nonlinear constitutive branch relationship for the memristor that can be straightforwardly combined with models for traditional components in a standard industry package for electrical simulation.\",\"PeriodicalId\":129875,\"journal\":{\"name\":\"2016 IEEE 7th Latin American Symposium on Circuits & Systems (LASCAS)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 7th Latin American Symposium on Circuits & Systems (LASCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LASCAS.2016.7451020\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 7th Latin American Symposium on Circuits & Systems (LASCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LASCAS.2016.7451020","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

随着2008年纳米忆阻器的问世,纳米忆阻器在电子设计中有了大量的应用。尽管目前在制造过程中还存在一些问题,但忆阻器被认为是现代电子系统发展的基本电路单元。毫无疑问,对于包含忆阻器的电路以及传统电子器件,开发电路设计验证方法和CAD工具是必要的。在本文中,我们提出了一种电路仿真方法,用于记忆电路的电气仿真。该方法得出了忆阻器的非线性本构分支关系,该关系可以直接与标准工业封装中的传统元件模型相结合,用于电气仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A CAD-oriented simulation methodology for memristive circuits
With the fabrication of the nanometric memristor in 2008, a large number of applications in electronic design have been devised for the new device. Despite the current problems involved in its fabrication, the memristor is considered to be the basic circuit cell for the development of modern electronic systems. Unquestionably, it is necessary to develop circuit design verification methodologies and CAD tools for circuits containing memristors as well as traditional electronics. In this paper, we present a circuit simulation methodology for the electrical simulation of memristive circuits. The methodology results in a nonlinear constitutive branch relationship for the memristor that can be straightforwardly combined with models for traditional components in a standard industry package for electrical simulation.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信