A. Ohba, S. Ohbayashi, T. Shiomi, S. Takano, K. Anami, H. Honda, Y. Ishigaki, M. Hatanaka, S. Nagao, S. Kayano
{"title":"具有无程序冗余的7 ns 1 Mb BiCMOS ECL SRAM","authors":"A. Ohba, S. Ohbayashi, T. Shiomi, S. Takano, K. Anami, H. Honda, Y. Ishigaki, M. Hatanaka, S. Nagao, S. Kayano","doi":"10.1109/VLSIC.1990.111085","DOIUrl":null,"url":null,"abstract":"A 7-ns, 1 M×1/256 K×4 BiCMOS ECL (emitter coupled logic) SRAM with program-free redundancy is described. To obtain the fast address access time and low power consumption, an improved ECL buffer and two-stage sensing scheme were adopted. The SRAM was fabricated with a 0.8-μm double-poly-Si double-metal BiCMOS technology. The RAM has an ECL 10 K interface and operates at a supply voltage of -5.2 V. An access time of 7 ns has been obtained. Active 680 mW for ×4 mode. The cell size is 5.4 μm×7.2 μm (38.88 μm2); the die size is 5.46 mm×16.16 mm (88.24 mm2)","PeriodicalId":239990,"journal":{"name":"Digest of Technical Papers., 1990 Symposium on VLSI Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 7 ns 1 Mb BiCMOS ECL SRAM with program-free redundancy\",\"authors\":\"A. Ohba, S. Ohbayashi, T. Shiomi, S. Takano, K. Anami, H. Honda, Y. Ishigaki, M. Hatanaka, S. Nagao, S. Kayano\",\"doi\":\"10.1109/VLSIC.1990.111085\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 7-ns, 1 M×1/256 K×4 BiCMOS ECL (emitter coupled logic) SRAM with program-free redundancy is described. To obtain the fast address access time and low power consumption, an improved ECL buffer and two-stage sensing scheme were adopted. The SRAM was fabricated with a 0.8-μm double-poly-Si double-metal BiCMOS technology. The RAM has an ECL 10 K interface and operates at a supply voltage of -5.2 V. An access time of 7 ns has been obtained. Active 680 mW for ×4 mode. The cell size is 5.4 μm×7.2 μm (38.88 μm2); the die size is 5.46 mm×16.16 mm (88.24 mm2)\",\"PeriodicalId\":239990,\"journal\":{\"name\":\"Digest of Technical Papers., 1990 Symposium on VLSI Circuits\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Technical Papers., 1990 Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.1990.111085\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers., 1990 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1990.111085","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
摘要
描述了具有无程序冗余的7-ns, 1 M×1/256 K×4 BiCMOS ECL(发射极耦合逻辑)SRAM。为了获得更快的地址访问时间和更低的功耗，采用了改进的ECL缓冲器和两级感知方案。SRAM采用0.8- m双多晶硅双金属BiCMOS技术制备。RAM具有ECL 10 K接口，并在-5.2 V的电源电压下工作。访问时间为7ns。有效值680mw，适用于4次模式。细胞大小为5.4 μ m × 7.2 μ m (38.88 μ m²);模具尺寸为5.46 mm × 16.16 mm (88.24 mm2)
A 7 ns 1 Mb BiCMOS ECL SRAM with program-free redundancy
A 7-ns, 1 M×1/256 K×4 BiCMOS ECL (emitter coupled logic) SRAM with program-free redundancy is described. To obtain the fast address access time and low power consumption, an improved ECL buffer and two-stage sensing scheme were adopted. The SRAM was fabricated with a 0.8-μm double-poly-Si double-metal BiCMOS technology. The RAM has an ECL 10 K interface and operates at a supply voltage of -5.2 V. An access time of 7 ns has been obtained. Active 680 mW for ×4 mode. The cell size is 5.4 μm×7.2 μm (38.88 μm2); the die size is 5.46 mm×16.16 mm (88.24 mm2)
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
