{"title":"再结晶技术的进展","authors":"P. Zavracky, L. Allen, D. Vu, M. Batty","doi":"10.1109/SOSSOI.1990.145706","DOIUrl":null,"url":null,"abstract":"A program is briefly reported aimed at the development of SOI material using a seeded zone melting recrystallization (ZMR) technique which is known as isolated silicon epitaxy (ISE). The ISE process has the flexibility required to meet the demands of a variety of different applications. Specifically, thin films of epitaxial Si (0.10 mu m) on thin SiO/sub 2/ (0.4 mu m) layers are being produced for fully depleted CMOS applications. At the same time, low-defect thick-film Si (>2 mu m) on thick oxide (1-2 mu m) are being fabricated for bipolar applications.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Advances in recrystallization technology\",\"authors\":\"P. Zavracky, L. Allen, D. Vu, M. Batty\",\"doi\":\"10.1109/SOSSOI.1990.145706\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A program is briefly reported aimed at the development of SOI material using a seeded zone melting recrystallization (ZMR) technique which is known as isolated silicon epitaxy (ISE). The ISE process has the flexibility required to meet the demands of a variety of different applications. Specifically, thin films of epitaxial Si (0.10 mu m) on thin SiO/sub 2/ (0.4 mu m) layers are being produced for fully depleted CMOS applications. At the same time, low-defect thick-film Si (>2 mu m) on thick oxide (1-2 mu m) are being fabricated for bipolar applications.<<ETX>>\",\"PeriodicalId\":344373,\"journal\":{\"name\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOSSOI.1990.145706\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145706","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A program is briefly reported aimed at the development of SOI material using a seeded zone melting recrystallization (ZMR) technique which is known as isolated silicon epitaxy (ISE). The ISE process has the flexibility required to meet the demands of a variety of different applications. Specifically, thin films of epitaxial Si (0.10 mu m) on thin SiO/sub 2/ (0.4 mu m) layers are being produced for fully depleted CMOS applications. At the same time, low-defect thick-film Si (>2 mu m) on thick oxide (1-2 mu m) are being fabricated for bipolar applications.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
