双δ掺杂In0.7Ga0.3As/In0.52Al0.48As/InP pHEMT的二维物理建模和直流优化

2015 9th International Symposium on Advanced Topics in Electrical Engineering (ATEE) Pub Date : 2015-05-07 DOI:10.1109/ATEE.2015.7133929

Z. Djennati, Z. Kourdi, K. Ghaffour

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引用次数: 1

摘要

本研究利用SILVACO TCAD对制备的双δ δ掺杂In0.7Ga0.3As/In0.52Al0.48As/InP pHEMT进行了优化。本研究的第一个目标是通过逆建模建立一个结构模型，使模拟结果与测量结果相匹配。第二个目标是建议修改势垒层(或电源)的几何形状和掺杂浓度，以优化pHEMT的直流参数，如最大固有跨导和阈值电压。pHEMT结构的直流特性与实测数据和仿真结果吻合较好。我们发现最大跨导可以优化50%，并且势垒层掺杂浓度与阈值电压之间呈线性关系。

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2-D physical modeling and DC optimization of a double delta doped In0.7Ga0.3As/In0.52Al0.48As/InP pHEMT

This study focuses on the optimization of a fabricated double δ-delta doped In0.7Ga0.3As/In0.52Al0.48As/InP pHEMT using SILVACO TCAD. The first objective of this study is to develop a structure model from the fabricated device by inverse modeling to be able to match simulated results with measured results. The second objective is to suggest modifications in the geometry and the doping concentration of the barrier layer (or supply) in order to optimize the DC parameters of the pHEMT, such as max intrinsic transconductance and threshold voltage. The DC characteristics of the pHEMT structure present a good matching between with the measured data and the simulated results. We show that the maximum transconductance could be optimized by 50% and a linear relation between the doping concentration of barrier layer and the threshold voltage.

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2015 9th International Symposium on Advanced Topics in Electrical Engineering (ATEE)

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