一种采用宽带线性化技术的高线性低噪声放大器，带有可调谐的多门控晶体管

2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2013-06-02 DOI:10.1109/RFIC.2013.6569555

Jaeyoung Lee, Jeiyoung Lee, Bonkee Kim, Boeun Kim, C. Nguyen

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引用次数: 10

摘要

提出了一种基于可调谐多门控晶体管(MGTRs)的宽带线性化技术。采用了额外的可调谐输入电容和改进的导数叠加(DS)方法来提高放大器的射频线性度。采用该线性化技术的低噪声放大器(LNA)采用0.18 μm CMOS工艺，适用于UHF频段(470-862 MHz)的各种移动电视标准。LNA的IIP3为19dbm，增益为16.5 db, NF为1.33 db，功耗为10.8 mw。在期望的UHF频段内，LNA将非状态辅助晶体管获得的平均IIP3提高11.7 dBm。

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A highly linear low-noise amplifier using a wideband linearization technique with tunable multiple gated transistors

A wideband linearization technique using tunable multiple gated transistors (MGTRs) is proposed. Extra tunable input capacitors and the modified derivative superposition (DS) method are also adopted to increase the amplifier's linearity at RF. A low-noise amplifier (LNA) employing the proposed linearization technique has been developed with 0.18-μm CMOS process for various mobile TV standards in UHF band (470-862 MHz). The LNA achieves 19-dBm IIP3, 16.5-dB gain, and 1.33-dB NF with 10.8-mW power consumption. Over the desired UHF band, the LNA increases the average IIP3 obtained with off-state auxiliary transistor by 11.7 dBm.

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2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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