{"title":"SOI mosfet的二维数值器件模拟","authors":"Y. Iriye, T. Ishizuka","doi":"10.1109/SOI.1988.95417","DOIUrl":null,"url":null,"abstract":"The use of a two-dimensional device simulator has been analyzed for SOI MOSFETs. The drain current kink effect and a phenomenon for substrate floating devices have been simulated. The governing equations have been solved numerically by a finite-difference method.<<ETX>>","PeriodicalId":391934,"journal":{"name":"Proceedings. SOS/SOI Technology Workshop","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Two-dimensional numerical device simulation for SOI MOSFETs\",\"authors\":\"Y. Iriye, T. Ishizuka\",\"doi\":\"10.1109/SOI.1988.95417\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The use of a two-dimensional device simulator has been analyzed for SOI MOSFETs. The drain current kink effect and a phenomenon for substrate floating devices have been simulated. The governing equations have been solved numerically by a finite-difference method.<<ETX>>\",\"PeriodicalId\":391934,\"journal\":{\"name\":\"Proceedings. SOS/SOI Technology Workshop\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. SOS/SOI Technology Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1988.95417\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. SOS/SOI Technology Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1988.95417","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two-dimensional numerical device simulation for SOI MOSFETs
The use of a two-dimensional device simulator has been analyzed for SOI MOSFETs. The drain current kink effect and a phenomenon for substrate floating devices have been simulated. The governing equations have been solved numerically by a finite-difference method.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
