栅极感应势垒场效应晶体管——一种用于有源矩阵液晶显示系统的新型薄膜晶体管

VLSI design (Print) Pub Date : 1900-01-01 DOI:10.1109/VLSID.2006.93

J. Sivagnaname, H. Ngo, K. Nowka, R. Montoye, Richard B. Brown

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Gate-Induced Barrier Field Effect Transistor (GBFET) - A New Thin Film Transistor for Active Matrix Liquid Crystal Display Systems

Using two-dimensional simulation, we report a new gate-induced barrier field effect transistor (GBFET) which exhibits at least three orders of magnitude less OFF state leakage current when compared to a conventional poly-Si TFT. We demonstrate that the GBFET is completely free of pseudo-subthreshold conduction making it a very attractive device for active matrix liquid crystal display systems.

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VLSI design (Print)

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