{"title":"用于60GHz无线通信的8Gbps CMOS ASK调制器","authors":"A. Oncu, K. Takano, M. Fujishima","doi":"10.1109/ASSCC.2008.4708745","DOIUrl":null,"url":null,"abstract":"In this paper we present a millimeter-wave CMOS amplitude-shift-keying (ASK) modulator for 60 GHz wireless communication at greater than 1 Gbps. It is designed using shunt NMOSFET switches between the signal and the ground line of a transmission line. A reduced-switch architecture is used to achieve high speed. The transmission line length between switches is adjusted to achieve high isolation with a reduced number of switches. A 60 GHz millimeter-wave ASK modulator is successfully realized by using a 6-metal 1-poly 90 nm CMOS process. The size of the chip is 0.8 mm times 0.48 mm including the pads. The core size is 0.61 mm times 0.3 mm. The isolation and maximum data rate of the modulator at 60 GHz are measured to be 26.6 dB and 8 Gbps, respectively. The product of the maximum data rate and the isolation of this modulator is 170 GHz, which is the highest value among over-Gbps ASK modulators.","PeriodicalId":143173,"journal":{"name":"2008 IEEE Asian Solid-State Circuits Conference","volume":"C-23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"8Gbps CMOS ASK modulator for 60GHz wireless communication\",\"authors\":\"A. Oncu, K. Takano, M. Fujishima\",\"doi\":\"10.1109/ASSCC.2008.4708745\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present a millimeter-wave CMOS amplitude-shift-keying (ASK) modulator for 60 GHz wireless communication at greater than 1 Gbps. It is designed using shunt NMOSFET switches between the signal and the ground line of a transmission line. A reduced-switch architecture is used to achieve high speed. The transmission line length between switches is adjusted to achieve high isolation with a reduced number of switches. A 60 GHz millimeter-wave ASK modulator is successfully realized by using a 6-metal 1-poly 90 nm CMOS process. The size of the chip is 0.8 mm times 0.48 mm including the pads. The core size is 0.61 mm times 0.3 mm. The isolation and maximum data rate of the modulator at 60 GHz are measured to be 26.6 dB and 8 Gbps, respectively. The product of the maximum data rate and the isolation of this modulator is 170 GHz, which is the highest value among over-Gbps ASK modulators.\",\"PeriodicalId\":143173,\"journal\":{\"name\":\"2008 IEEE Asian Solid-State Circuits Conference\",\"volume\":\"C-23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Asian Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2008.4708745\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2008.4708745","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 28
摘要
在本文中,我们提出了一种毫米波CMOS幅度移位键控(ASK)调制器,用于60ghz无线通信,速度大于1gbps。它是使用并联NMOSFET开关在传输线的信号和地线之间设计的。采用简化交换机架构实现高速。调整交换机之间的传输线长度,以减少交换机数量实现高隔离。采用6金属1聚90 nm CMOS工艺,成功实现了60 GHz毫米波ASK调制器。芯片的尺寸为0.8 mm × 0.48 mm(包括衬垫)。芯尺寸为0.61 mm × 0.3 mm。该调制器在60 GHz时的隔离度和最大数据速率分别为26.6 dB和8 Gbps。该调制器的最大数据速率与隔离度之乘积为170 GHz,是超gbps ASK调制器中最高的。
8Gbps CMOS ASK modulator for 60GHz wireless communication
In this paper we present a millimeter-wave CMOS amplitude-shift-keying (ASK) modulator for 60 GHz wireless communication at greater than 1 Gbps. It is designed using shunt NMOSFET switches between the signal and the ground line of a transmission line. A reduced-switch architecture is used to achieve high speed. The transmission line length between switches is adjusted to achieve high isolation with a reduced number of switches. A 60 GHz millimeter-wave ASK modulator is successfully realized by using a 6-metal 1-poly 90 nm CMOS process. The size of the chip is 0.8 mm times 0.48 mm including the pads. The core size is 0.61 mm times 0.3 mm. The isolation and maximum data rate of the modulator at 60 GHz are measured to be 26.6 dB and 8 Gbps, respectively. The product of the maximum data rate and the isolation of this modulator is 170 GHz, which is the highest value among over-Gbps ASK modulators.