用于精确测量mosfet统计特性的测试结构

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. Pub Date : 2002-04-08 DOI:10.1109/ICMTS.2002.1193170

Y. Shimizu, Mitsuo Nakamura, T. Matsuoka, Kenji Taniguchi

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引用次数: 31

摘要

提出了一种由MOSFET阵列和外围解码器电路组成的新型测试结构，用于研究MOSFET特性的统计变化(失配)。在结构中采用开尔文技术来消除金属布线和传输门的寄生电阻，从而可以在相同的偏置条件下测量阵列中的任何MOSFET。利用该结构进行精确的电测量，可以推导出放置在小面积mosfet的阈值电压和跨导的统计变化。

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Test structure for precise statistical characteristics measurement of MOSFETs

A new test structure consisting of an MOSFET array and peripheral decoder circuits is proposed to study statistical variation (mismatch) in MOSFETs' characteristics. Kelvin technique was implemented in the structure to cancel parasitic resistance of metal wiring and transmission gates in such a way that any MOSFET in the array can be measured at the same bias condition. Accurate electrical measurements using the structure makes it possible to derive statistical variation of threshold voltage and transconductance of MOSFETs placed in small area.

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来源期刊

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.

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