{"title":"具有四面阴极的CMOS肖特基势垒二极管","authors":"Junyu Shi, Dasheng Cui, X. Lv","doi":"10.1109/ICAM.2016.7813572","DOIUrl":null,"url":null,"abstract":"TiSix-Si Schottky diode on an n-well is designed and fabricated. The device structure is analyzed in depth. The influence of the main parameters on the diode's cut-off frequency is investigated. The analysis shows that the cut-off frequency increases as the Schottky contact area decreases. The series resistance can be further reduced by employing a four-sided cathode. The designed diode achieves the cut-off frequency of 1.3 THz. The ideality factor is 1.34, and the barrier height is 0.38 eV. The high cut-off frequency makes the proposed diodes suitable for millimeter wave even THz detection.","PeriodicalId":179100,"journal":{"name":"2016 International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A CMOS Schottky barrier diode with the four-sided cathode\",\"authors\":\"Junyu Shi, Dasheng Cui, X. Lv\",\"doi\":\"10.1109/ICAM.2016.7813572\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"TiSix-Si Schottky diode on an n-well is designed and fabricated. The device structure is analyzed in depth. The influence of the main parameters on the diode's cut-off frequency is investigated. The analysis shows that the cut-off frequency increases as the Schottky contact area decreases. The series resistance can be further reduced by employing a four-sided cathode. The designed diode achieves the cut-off frequency of 1.3 THz. The ideality factor is 1.34, and the barrier height is 0.38 eV. The high cut-off frequency makes the proposed diodes suitable for millimeter wave even THz detection.\",\"PeriodicalId\":179100,\"journal\":{\"name\":\"2016 International Conference on Integrated Circuits and Microsystems (ICICM)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Integrated Circuits and Microsystems (ICICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICAM.2016.7813572\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Integrated Circuits and Microsystems (ICICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICAM.2016.7813572","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A CMOS Schottky barrier diode with the four-sided cathode
TiSix-Si Schottky diode on an n-well is designed and fabricated. The device structure is analyzed in depth. The influence of the main parameters on the diode's cut-off frequency is investigated. The analysis shows that the cut-off frequency increases as the Schottky contact area decreases. The series resistance can be further reduced by employing a four-sided cathode. The designed diode achieves the cut-off frequency of 1.3 THz. The ideality factor is 1.34, and the barrier height is 0.38 eV. The high cut-off frequency makes the proposed diodes suitable for millimeter wave even THz detection.
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