Design and Analysis of kV-Class Ultrawide Bandgap β-Ga2O3/p-GaN Heterojunction Barrier Schottky Diodes

Ultrawide Bandgap kV-class β-Ga2O3/GaN heterojunction based junction barrier Schottky (JBS) diodes are investigated using SILVACO TCAD simulation. The effects of p-GaN region thickness (h), width (w), and spacing (s) on the JBS diodes are comprehensively studied, where conventional β-Ga2O3 Schottky barrier diodes (SBD) are used as a reference. The optimized JBS diodes exhibited higher breakdown voltages and lower leakage than the reference SBDs. Furthermore, different geometries of p-GaN regions were also investigated to optimize electric field distribution and improve breakdown voltages of the JBS diodes. The device with p-GaN regions with corner rounding achieved the highest breakdown voltage of 1275 V compared with devices with rectangular and triangular p-GaN regions. This work can serve as an important reference for the design and demonstration of β-Ga2O3 heterojunction based JBS diodes.