用于特低电压应用的双向磁耦合t源逆变器

T. Baier, B. Piepenbreier
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引用次数: 2

摘要

本文研究了一种磁耦合t源逆变器(TSI)在特低电压和大电流应用中的性能。由于TSI是具有阻抗源网络的知名逆变器组的一部分,因此它能够在单级内将输出电压提升到超过输入电压的水平。这个提升操作是通过插入一个名为“shoot through”的新操作状态来实现的。通过在变压器设计中使用适当的匝数比,与没有耦合电感的阻抗源网络(例如Z-Source和准Z-Source)的逆变器相比,TSI理论上可以达到相同的升压因数,同时工作在较小的射透占空比下。考虑到不可能制造出理想的变压器,变压器的耦合系数和漏感分别决定了变压器的性能。因此,本文重点介绍了TSI在特低电压大电流下的实际应用,并在实验结果部分揭示了其局限性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Bidirectional magnetically coupled T-Source Inverter for extra low voltage application
This paper investigates the performance of a magnetically coupled T-Source-Inverter (TSI) for extra low voltage and high current applications. As the TSI is part of the well-known group of inverters with impedance source networks, it is capable to boost the output voltage beyond the level of the input voltage within a single stage. This boost operation is achieved by inserting a new operational state called `shoot through'. By using a proper turns ratio for the transformer design, the TSI can theoretically reach the same boost factor compared to inverters with impedance source networks without coupled inductors (e.g. Z-Source and Quasi-Z-Source) while operating with a smaller shoot through duty cycle. Considering the fact that it is not possible to build an ideal transformer, the coupling coefficient of the transformer respectively the leakage inductance determines its performance. For that reason, this paper focuses on a practical extra low voltage and high current application of the TSI and its limitations which are exposed in the section of the experimental results.
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