MIS结构Ni-Dy/sub x/O/sub y/-n-Si的电荷性质[100]

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088477

N. Babushkina, S. Malyshev, L. Romanova, A. Chizh, D. Zhygulin

{"title":"MIS结构Ni-Dy/sub x/O/sub y/-n-Si的电荷性质[100]","authors":"N. Babushkina, S. Malyshev, L. Romanova, A. Chizh, D. Zhygulin","doi":"10.1109/ASDAM.2002.1088477","DOIUrl":null,"url":null,"abstract":"The study of the charge properties of Dy/sub x/O/sub y/ films with the high permittivity (/spl epsiv//spl sim/10/spl divide/12) on the n-Si [100] is presented It is shown that suitable charge properties of the Ni-Dy/sub x/O/sub y/-n-Si [100] structures are obtained under the Dy evaporation in Ar/O/sub 2/ environment and following film oxidation in oxygen stream at the temperatures 360/spl divide/380/spl deg/C. Based on the results obtained in this study it is concluded that the Dy/sub x/O/sub y/ films are good compatible gate dielectric material with the high permittivity for the silicon MIS structures.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Charge properties of MIS structures Ni-Dy/sub x/O/sub y/-n-Si [100]\",\"authors\":\"N. Babushkina, S. Malyshev, L. Romanova, A. Chizh, D. Zhygulin\",\"doi\":\"10.1109/ASDAM.2002.1088477\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The study of the charge properties of Dy/sub x/O/sub y/ films with the high permittivity (/spl epsiv//spl sim/10/spl divide/12) on the n-Si [100] is presented It is shown that suitable charge properties of the Ni-Dy/sub x/O/sub y/-n-Si [100] structures are obtained under the Dy evaporation in Ar/O/sub 2/ environment and following film oxidation in oxygen stream at the temperatures 360/spl divide/380/spl deg/C. Based on the results obtained in this study it is concluded that the Dy/sub x/O/sub y/ films are good compatible gate dielectric material with the high permittivity for the silicon MIS structures.\",\"PeriodicalId\":179900,\"journal\":{\"name\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2002.1088477\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088477","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了n-Si[100]上具有高介电常数(/spl epsiv//spl sim/10/spl divide/12)的Dy/sub x/O/sub y/-n-Si[100]薄膜的电荷性质。结果表明，Dy在Ar/O/sub 2/环境中蒸发，薄膜在360/spl divide/380/spl℃下在氧气流中氧化，得到了合适的Ni-Dy/sub x/O/sub y/-n-Si[100]结构的电荷性质。研究结果表明，Dy/sub x/O/sub y/薄膜具有较高的介电常数，是适于硅MIS结构的栅极介质材料。

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Charge properties of MIS structures Ni-Dy/sub x/O/sub y/-n-Si [100]

The study of the charge properties of Dy/sub x/O/sub y/ films with the high permittivity (/spl epsiv//spl sim/10/spl divide/12) on the n-Si [100] is presented It is shown that suitable charge properties of the Ni-Dy/sub x/O/sub y/-n-Si [100] structures are obtained under the Dy evaporation in Ar/O/sub 2/ environment and following film oxidation in oxygen stream at the temperatures 360/spl divide/380/spl deg/C. Based on the results obtained in this study it is concluded that the Dy/sub x/O/sub y/ films are good compatible gate dielectric material with the high permittivity for the silicon MIS structures.

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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem

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