神经信号识别系统中基于氧化物的纳米模拟突触装置

Daeseok Lee, Jaesung Park, Kibong Moon, Junwoo Jang, Sangsu Park, Myonglae Chu, Jongin Kim, J. Noh, M. Jeon, Byoung Hun Lee, Boreom Lee, Byung-geun Lee, H. Hwang
{"title":"神经信号识别系统中基于氧化物的纳米模拟突触装置","authors":"Daeseok Lee, Jaesung Park, Kibong Moon, Junwoo Jang, Sangsu Park, Myonglae Chu, Jongin Kim, J. Noh, M. Jeon, Byoung Hun Lee, Boreom Lee, Byung-geun Lee, H. Hwang","doi":"10.1109/IEDM.2015.7409628","DOIUrl":null,"url":null,"abstract":"We report oxide based analog synpase for neuromorphic system. By optimizing redox reaction at the metal/oxide interface, we can obtain stable analog synapse characteristics and wafer scale switching uniformity. We have confirmed the feasibility of neuromorphic hardware system with oxide synapse array device which recognizes the electroencephalogram (EEG) signal and rat's neural signal.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"39","resultStr":"{\"title\":\"Oxide based nanoscale analog synapse device for neural signal recognition system\",\"authors\":\"Daeseok Lee, Jaesung Park, Kibong Moon, Junwoo Jang, Sangsu Park, Myonglae Chu, Jongin Kim, J. Noh, M. Jeon, Byoung Hun Lee, Boreom Lee, Byung-geun Lee, H. Hwang\",\"doi\":\"10.1109/IEDM.2015.7409628\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report oxide based analog synpase for neuromorphic system. By optimizing redox reaction at the metal/oxide interface, we can obtain stable analog synapse characteristics and wafer scale switching uniformity. We have confirmed the feasibility of neuromorphic hardware system with oxide synapse array device which recognizes the electroencephalogram (EEG) signal and rat's neural signal.\",\"PeriodicalId\":336637,\"journal\":{\"name\":\"2015 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"39\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2015.7409628\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409628","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 39

摘要

我们报道了神经形态系统中基于氧化物的模拟突触酶。通过优化金属/氧化物界面的氧化还原反应,我们可以获得稳定的模拟突触特性和晶圆级开关均匀性。我们证实了用氧化突触阵列装置来识别脑电图信号和大鼠神经信号的神经形态硬件系统的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Oxide based nanoscale analog synapse device for neural signal recognition system
We report oxide based analog synpase for neuromorphic system. By optimizing redox reaction at the metal/oxide interface, we can obtain stable analog synapse characteristics and wafer scale switching uniformity. We have confirmed the feasibility of neuromorphic hardware system with oxide synapse array device which recognizes the electroencephalogram (EEG) signal and rat's neural signal.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信