超薄ZrO/sub /和Zr硅酸盐栅极电介质mosfet的性能

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852760

W. Qi, R. Nieh, B. Lee, K. Onishi, L. Kang, Y. Jeon, Jack C. Lee, V. Kaushik, '. Bich-YenNeuyen, '. LataPrabhu, K. Eisenbeiser, J. Finder

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引用次数: 34

摘要

本文报道了用ZrO/sub - 2/和zr -硅酸盐栅极介质制备的PMOS和NMOS的晶体管性能。这些高k薄膜具有低泄漏，低亚阈值摆动(S)和良好的通断特性。得到了良好的有效电子和空穴迁移率。结果表明，由于zr -硅酸盐与Si衬底的界面较好，其迁移率更接近于热SiO/sub 2/。

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Performance of MOSFETs with ultra thin ZrO/sub 2/ and Zr silicate gate dielectrics

In this paper, we report the transistor performance of both PMOS and NMOS fabricated with ZrO/sub 2/ and Zr-silicate gate dielectrics. These high-k films exhibit low leakage, low subthreshold swing (S), and good on-off characteristics. Good effective electron and hole mobilities were obtained. It was found that for Zr-silicate, a mobility closer to thermal SiO/sub 2/ was demonstrated due to the better interface with Si substrate.

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2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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