提高SOI功率MOSFET击穿电压的埋地气隙结构

Proceedings IPEMC 2000. Third International Power Electronics and Motion Control Conference (IEEE Cat. No.00EX435) Pub Date : 2000-08-15 DOI:10.1109/IPEMC.2000.882975

B. Jeon, D.Y. Kim, Y.S. Lee, J. Oh, M. Han, Y. Choi

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引用次数: 11

摘要

提出了一种采用埋地气隙结构(BAGS)的新型SOI功率MOSFET，并进行了数值仿真验证。由于埋入式气隙有效地减小了漏极结附近的垂直电场，该结构的击穿电压比传统结构高。结果表明，由于埋置气隙的介电常数较低，漏极-衬底电容减小。

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Buried air gap structure for improving the breakdown voltage of SOI power MOSFET's

A novel SOI power MOSFET employing a buried air gap structure (BAGS) is proposed and verified by numerical simulation. Higher breakdown voltage is achieved in proposed structure than conventional ones, because the buried air gap reduces the vertical electric field near the drain junction efficiently. It is shown that the drain-substrate capacitance is reduced due to the low dielectric constant of the buried air gap.

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Proceedings IPEMC 2000. Third International Power Electronics and Motion Control Conference (IEEE Cat. No.00EX435)

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