基于tcad的伽玛和重离子辐射下纳米片和叉片FET电特性分析

2023 11th International Symposium on Electronic Systems Devices and Computing (ESDC) Pub Date : 2023-05-04 DOI:10.1109/ESDC56251.2023.10149855

Nischal Anand, Rohit Rai, Yashvi Verma, Amit Kumar Singh Chauhan, Deepak Kumar Sharma, Vivek Kumar

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引用次数: 0

摘要

在本文中，我们研究了γ和重离子辐射对5nm堆叠纳米片FET和叉形片FET的影响，并分析了辐射对电路级特性的影响。这些分析是通过三维技术计算机辅助设计(3-D TCAD)模拟进行的。通过伽马射线和重离子照射，研究了纳米片场效应管和叉形片的电荷生成速率。伽玛粒子和重离子的影响在器件和电路水平进行了研究。比较了叉形纳米片FET和栅极纳米片FET的实验结果。经过比较，我们发现辐射对叉片的影响比纳米片更大。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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TCAD-Based Analysis of Nanosheet and Forksheet FET Electrical Characteristics in the Presence of Gamma and Heavy Ion Radiation

In this article, we have studied the effects of gamma and heavy ion radiation on 5nm stacked nanosheet FET and Fork-sheet FET and analyzed the impact of radiation on circuitlevel characteristics. These analyses are carried out by using Three-Dimensional Technology Computer-Aided Design (3-D TCAD) simulations. By exposing gamma rays and heavy ion, the performance in terms of charge generation rate of nanosheet FET and Fork-sheet are investigated. Gamma particle and heavy-ion impacts are studied at the device and circuit levels. The results of Fork-sheet FET are compared with the results of gate-all-around nanosheet FET. After comparison, we found that radiation has a stronger influence on Fork-sheet than Nanosheet.

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来源期刊

2023 11th International Symposium on Electronic Systems Devices and Computing (ESDC)

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