基于0.18 μm CMOS技术的超宽带LNA设计与仿真

2016 2nd International Conference on Communication Control and Intelligent Systems (CCIS) Pub Date : 2016-11-01 DOI:10.1109/CCINTELS.2016.7878229

Manish Kumar, Vinay Kumar Deolia, Dheeraj Kalra

{"title":"基于0.18 μm CMOS技术的超宽带LNA设计与仿真","authors":"Manish Kumar, Vinay Kumar Deolia, Dheeraj Kalra","doi":"10.1109/CCINTELS.2016.7878229","DOIUrl":null,"url":null,"abstract":"This paper proposed an UWB LNA using 0.18μm CMOS technology with a wideband input matching circuit. The cascode structure and source degeneration are adopted to achieve low noise figure and high gain characteristics. Input reflection coefficient and reverse isolation are optimized in UWB band through parametric analysis. The proposed LNA achieves a high gain of 22.082dB at 5.059GHz and minimum noise figure of 1.094dB.","PeriodicalId":158982,"journal":{"name":"2016 2nd International Conference on Communication Control and Intelligent Systems (CCIS)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"DESIGN and simlation of UWB LNA using 0.18 μm CMOS technology\",\"authors\":\"Manish Kumar, Vinay Kumar Deolia, Dheeraj Kalra\",\"doi\":\"10.1109/CCINTELS.2016.7878229\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposed an UWB LNA using 0.18μm CMOS technology with a wideband input matching circuit. The cascode structure and source degeneration are adopted to achieve low noise figure and high gain characteristics. Input reflection coefficient and reverse isolation are optimized in UWB band through parametric analysis. The proposed LNA achieves a high gain of 22.082dB at 5.059GHz and minimum noise figure of 1.094dB.\",\"PeriodicalId\":158982,\"journal\":{\"name\":\"2016 2nd International Conference on Communication Control and Intelligent Systems (CCIS)\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 2nd International Conference on Communication Control and Intelligent Systems (CCIS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CCINTELS.2016.7878229\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 2nd International Conference on Communication Control and Intelligent Systems (CCIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CCINTELS.2016.7878229","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文提出了一种采用0.18μm CMOS技术的宽带输入匹配电路的超宽带LNA。采用级联码结构和源退化，实现了低噪声系数和高增益特性。通过参数分析优化了UWB波段的输入反射系数和反向隔离。该LNA在5.059GHz时实现22.082dB的高增益，最小噪声系数为1.094dB。

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DESIGN and simlation of UWB LNA using 0.18 μm CMOS technology

This paper proposed an UWB LNA using 0.18μm CMOS technology with a wideband input matching circuit. The cascode structure and source degeneration are adopted to achieve low noise figure and high gain characteristics. Input reflection coefficient and reverse isolation are optimized in UWB band through parametric analysis. The proposed LNA achieves a high gain of 22.082dB at 5.059GHz and minimum noise figure of 1.094dB.

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2016 2nd International Conference on Communication Control and Intelligent Systems (CCIS)

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