{"title":"自偏置电阻反馈电流复用CMOS超宽带LNA与1.7dB nf用于IR-UWB应用","authors":"R. Erfani, Fatemeh Marefat, M. Ehsanian","doi":"10.1109/ICM.2014.7071824","DOIUrl":null,"url":null,"abstract":"In this paper, a self-biased resistive-feedback current-reused CMOS low-noise amplifier (LNA) is presented for impulse-radio ultra-wideband (IR-UWB) applications. Wideband input, inter-stage, and output matching are achieved by using two stages of resistive-feedback amplifiers with inductive peaking. Consequently, high and flat power gain (S21), low and highly-flat noise figure (NF), and small group-delay variation are simultaneously achieved. By employing resistive-feedback, not only wideband matching is guaranteed, but also both stages adopt self-biasing technique (power and area saving) which totally removes noise contribution of bias circuitry at the input (better NF performance). As a result, state-of-the-art NF of 1.7dB (@7GHz) is achieved where across the whole frequency band of interest (i.e., 3-11GHz) NF remains below 2 dB. A flat S21 of 12.9±0.45dB and small group-delay variation of 68.5±17.5ps are also achieved. The proposed UWB LNA dissipates 10.35mW under supply of 1.5V in 0.18μm CMOS technology.","PeriodicalId":107354,"journal":{"name":"2014 26th International Conference on Microelectronics (ICM)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Self-biased resistive-feedback current-reused CMOS UWB LNA with 1.7dB nf for IR-UWB applications\",\"authors\":\"R. Erfani, Fatemeh Marefat, M. Ehsanian\",\"doi\":\"10.1109/ICM.2014.7071824\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a self-biased resistive-feedback current-reused CMOS low-noise amplifier (LNA) is presented for impulse-radio ultra-wideband (IR-UWB) applications. Wideband input, inter-stage, and output matching are achieved by using two stages of resistive-feedback amplifiers with inductive peaking. Consequently, high and flat power gain (S21), low and highly-flat noise figure (NF), and small group-delay variation are simultaneously achieved. By employing resistive-feedback, not only wideband matching is guaranteed, but also both stages adopt self-biasing technique (power and area saving) which totally removes noise contribution of bias circuitry at the input (better NF performance). As a result, state-of-the-art NF of 1.7dB (@7GHz) is achieved where across the whole frequency band of interest (i.e., 3-11GHz) NF remains below 2 dB. A flat S21 of 12.9±0.45dB and small group-delay variation of 68.5±17.5ps are also achieved. The proposed UWB LNA dissipates 10.35mW under supply of 1.5V in 0.18μm CMOS technology.\",\"PeriodicalId\":107354,\"journal\":{\"name\":\"2014 26th International Conference on Microelectronics (ICM)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 26th International Conference on Microelectronics (ICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2014.7071824\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 26th International Conference on Microelectronics (ICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2014.7071824","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Self-biased resistive-feedback current-reused CMOS UWB LNA with 1.7dB nf for IR-UWB applications
In this paper, a self-biased resistive-feedback current-reused CMOS low-noise amplifier (LNA) is presented for impulse-radio ultra-wideband (IR-UWB) applications. Wideband input, inter-stage, and output matching are achieved by using two stages of resistive-feedback amplifiers with inductive peaking. Consequently, high and flat power gain (S21), low and highly-flat noise figure (NF), and small group-delay variation are simultaneously achieved. By employing resistive-feedback, not only wideband matching is guaranteed, but also both stages adopt self-biasing technique (power and area saving) which totally removes noise contribution of bias circuitry at the input (better NF performance). As a result, state-of-the-art NF of 1.7dB (@7GHz) is achieved where across the whole frequency band of interest (i.e., 3-11GHz) NF remains below 2 dB. A flat S21 of 12.9±0.45dB and small group-delay variation of 68.5±17.5ps are also achieved. The proposed UWB LNA dissipates 10.35mW under supply of 1.5V in 0.18μm CMOS technology.