N. le Gallou, J. Villemazet, B. Cogo, J. Cazaux, A. Mallet, L. Lapierre
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引用次数: 9
摘要
本文介绍了利用近年来研制的高击穿、高功率HBT - HB20S工艺首次研制的星载功率放大器。反F级混合功率放大器的设计采用了阿尔卡特空间为mmic开发的密集仿真方法,无需手动调谐即可达到非常高的性能。单芯片在1.5 GHz下获得的10 W / PAE > 65%的结果表明,该工艺能够处理非常高的功率密度和效率。
10 W High Efficiency 14V HBT Power Amplifier for Space Applications
This paper presents the first development of a space-borne power amplifier using the recently developed high breakdown, high Power HBT HB20S process of UMS. The inverse F class Hybrid Power Amplifier has been designed using intensive simulation methods developed at Alcatel Space for MMICs, allowing to reach very high performances without manual tuning. The results 10 W / PAE > 65% obtained with a single chip at 1.5 GHz demonstrate the capability of the process to handle with very high power densities and efficiencies.