一种采用SiGe技术的宽调谐范围的28 GHz低相位噪声科尔比压控振荡器

2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2018-08-01 DOI:10.1109/RFIT.2018.8524053

Zhigang Peng, Debin Hou, Jixin Chen, Yu Xiang, W. Hong

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引用次数: 5

摘要

提出了一种采用0.13um SiGe BiCMOS技术设计和制造的全集成低相位噪声和宽调谐范围差分科尔皮茨压控振荡器(VCO)，用于5G无线通信，工作频率为28 GHz。该压控振荡器利用电感发射极退化和电阻尾偏置实现低相位噪声和宽调谐范围。在中心频率为27.6 GHz的1mhz偏置时，测量到的相位噪声约为−109.1 dBc/Hz，调谐范围为25.1 GHz ~ 29.9 GHz(17.3%)。VCO的测量输出功率为+6.5 dBm。该工作的相位噪声和调谐范围与28ghz左右的其他硅基vco相当。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 28 GHz Low Phase-Noise Colpitts VCO with Wide Tuning-Range in SiGe Technology

A fully integrated low phase-noise and wide tuning-range differential Colpitts voltage-controlled-oscillator (VCO) designed and fabricated in 0.13um SiGe BiCMOS technology at 28 GHz for 5G wireless communications is presented. The proposed VCO utilizes inductive emitter degeneration and resistive tail bias to achieve low phase noise and wide tuning range. The measured phase noise is about −109.1 dBc/Hz at 1 MHz offset at a center frequency of 27.6 GHz and the measured tuning range is from 25.1 GHz to 29.9 GHz (17.3%). The measured output power delivered by the VCO is +6.5 dBm. Both the phase noise and the tuning range of this work are comparable with other silicon-based VCOs around 28 GHz.

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2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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