iii - v的魔力

Yonggang Zhang, Yi Gu, Yingjie Ma, X. Shao, Xue Li, H. Gong, Jia-xiong Fang
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引用次数: 0

摘要

III-V族化合物半导体在各种电子、光电和光子应用中具有丰富的特性,它们都是由III族和V族元素形成二元的各种神奇组合而产生的,从而产生千变万化的特性。本文以砷化物、磷化物和锑化物的二元结构为基础,从几何角度提出了各种各样的三元、四元和五元化合物,主要研究了它们在不同衬底上的带隙、晶格常数和晶格匹配域。简要讨论了氮化物和稀氮化物、铋化物和稀铋以及硼化物的特性。对整个iii - v的整体观察可能有助于全面了解其潜在能力和可持续发展,以及许多挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The magic of III-Vs
III-V compound semiconductors have abundant features for various electronic, optoelectronic and photonic applications, all arise from variform magic combination of group III and group V elements formed binaries, resulting in ever-changing characteristics. In this paper, diversified ternaries, quaternaries and quinaries are presented geometrically based on the binaries of arsenide, phosphide and antimonide, mainly concerned of their bandgap, lattice constant and the lattice match domain on different substrates. The features of nitride and dilute nitride, bismide and dilute bismuth, as well as boride, are also discussed briefly. An overall observation of whole III-Vs may contribute to the comprehensive understanding of their latent capacity and sustainable development, along with many challenges.
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