SiOx取向膜的热降解和贮存降解及其对NLCs取向的影响

Y. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy
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引用次数: 0

摘要

研究了在辉光放电等离子体中反应阴极溅射(RCS)沉积SiOx对准膜的热稳定性和降解稳定性。结果表明,热处理等外界因素引发了对准膜表面的转变,并在界面上形成了新的条件。这导致了LC分子易轴向方向的改变和LC排列结构中各种缺陷的出现。提出了在外部因素影响下提高调直层耐久性的技术途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal and storage degradation of SiOx orienting films and its influence on NLCs alignment
Thermal and degradation stability of SiOx aligning films deposited by reactive cathode sputtering (RCS) in glow discharge plasma has been investigated. It is shown that heat treatment and other external factors initiate transformations on the surface of aligning film and formed new conditions on the interface. It is lead to change of easy axis orientation direction of LC molecules and appearance of various defects in the LC aligned structures. The technological ways for increasing of aligning layers durability under influence of external factors has been proposed.
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