稀土基Heusler相REPdZ和REPd/sub 2/Z (Z = Sb,Bi)的物理性质

K. Gofryk, D. Kaczorowski, A. Jasper, Y. Grin
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引用次数: 2

摘要

四大系列的三元化合物REPdSb (Er) = Y, Ho, REPdBi (RE = Nd, Y, Dy, Ho Er), REPd /子2 /某人(= Y, Gd-Er)和REPd /子2 / Bi (= Y, Dy-Er)研究了磁化,磁化率、电阻率、热电动力测量温度范围中执行1.7 -300 K和5 t的磁场磁化率测量的赫斯勒阶段REPdZ和REPd /子2 / Z (RE = Y, Gd-Er;Z = Sb, Bi)表明,在低温下,所研究的化合物要么是顺磁性的,要么是反铁磁性的,具有几个开尔文的尼尔点。除基合金外,所有化合物的有效磁矩的实验值都接近于各自稀土/sup 3+/离子的理论值。对半heusler相REPdX (X = Sb, Bi)的电阻率测量表明其半金属或半金属性质。在低温下,电阻率表现出类似金属的行为,这可能是由于杂质带可能与导带重叠。在高温下,电导率遵循激活定律,该定律解释了杂质水平的逐渐热减少。塞贝克系数的正号可能表明某些受体中心产生的空穴是主要载流子。费米能级附近的能隙约为几十毫电子伏特,因此比类似化合物的电子结构计算估计的值要小得多。塞贝克系数相当大,与低载流子密度半金属的量级相当。在室温下,ErPdSb的热电优值为ZT /spl / 0.15。当半赫斯勒合金被表征为窄间隙半导体时,所有的REPd/sub 2/Sb和REPd/sub 2/Bi三元体都被发现具有类似金属的导电性。对于REPd/ sub2 /Bi系列,发生了从立方结构到低对称结构的结构转换,表现为输运特征的明显异常。这些材料的热电功率远低于REPdX合金。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Physical properties of rare-earth-based Heusler phases REPdZ and REPd/sub 2/Z (Z = Sb,Bi)
Four series of ternary compounds REPdSb (RE = Y, Ho, Er), REPdBi (RE = Nd, Y, Dy, Ho, Er), REPd/sub 2/Sb (RE = Y, Gd-Er) and REPd/sub 2/Bi (RE = Y, Dy-Er) were studied by means of magnetization, magnetic susceptibility, electrical resistivity, and thermoelectric power measurements performed in the temperature range 1.7-300 K and in magnetic fields up to 5 T. Magnetic susceptibility measurements of the Heusler phases REPdZ and REPd/sub 2/Z (RE = Y, Gd-Er; Z = Sb, Bi) have revealed that at low temperatures the compounds studied are either paramagnetic or antiferromagnetic with the Neel points of several Kelvin. For all these compounds but Y-based alloys experimental values of the effective magnetic moment are close to the theoretical ones for respective RE/sup 3+/ ions. Electrical resistivity measurements of the half-Heusler phases REPdX (X = Sb, Bi) have indicated their half-metallic or semimetallic character. At low temperatures the resistivity exhibits a metallic-like behaviour, which is probably due to an impurity band possibly overlapping with the conduction band. At high temperatures the electrical conductivities follow the activation law that accounts for gradual thermal depopulation of impurity levels. The positive sign of the Seebeck coefficient could indicate that holes arising from some acceptor centres are dominant carriers. The energy gaps near the Fermi level are of the order of tens millielectron volts and thus are much smaller than values estimated from the electronic structure calculations made for similar compounds. The Seebeck coefficient is quite large, of the order expected for low carrier density semimetals. The thermoelectric figure of merit evaluated for ErPdSb is ZT /spl ap/ 0.15 at room temperature. While half-Heusler alloys have been characterised as narrow-gap semiconductors all the REPd/sub 2/Sb and REPd/sub 2/Bi ternaries have been found to exhibit metallic-like conductivity. For the REPd/sub 2/Bi series a structural transformation from cubic to lower symmetry structures occurs that manifests itself as distinct anomalies in the transport characteristics. The thermoelectric power for these materials is much lower than that of the REPdX alloys.
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