{"title":"负电容FinFET 5 nm厚Hf0.5Zr0.5O2的表征与分析","authors":"Pin-Jui Chen, M. Tsai, F. Hou, Yung-Chun Wu","doi":"10.23919/SNW.2019.8782894","DOIUrl":null,"url":null,"abstract":"Negative capacitance (NC) Fin field effect transistors (FinFET) were experimentally demonstrated. These devices had complete dimensions of single channel widths (W<inf>Ch</inf>) from 20 nm to 1000 nm and gate lengths (L<inf>G</inf>) from 100 nm to 2000 nm. Experimental results show that W<inf>Ch</inf> is smaller than 30 nm and L<inf>G</inf> > W<inf>Ch</inf>, this proposed 5-nm-HZO Si NC-FinFET guarantees SS < 60 mV/decade.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization and Analysis of 5 nm-thick Hf0.5Zr0.5O2 for Negative Capacitance FinFET\",\"authors\":\"Pin-Jui Chen, M. Tsai, F. Hou, Yung-Chun Wu\",\"doi\":\"10.23919/SNW.2019.8782894\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Negative capacitance (NC) Fin field effect transistors (FinFET) were experimentally demonstrated. These devices had complete dimensions of single channel widths (W<inf>Ch</inf>) from 20 nm to 1000 nm and gate lengths (L<inf>G</inf>) from 100 nm to 2000 nm. Experimental results show that W<inf>Ch</inf> is smaller than 30 nm and L<inf>G</inf> > W<inf>Ch</inf>, this proposed 5-nm-HZO Si NC-FinFET guarantees SS < 60 mV/decade.\",\"PeriodicalId\":170513,\"journal\":{\"name\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2019.8782894\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2019.8782894","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization and Analysis of 5 nm-thick Hf0.5Zr0.5O2 for Negative Capacitance FinFET
Negative capacitance (NC) Fin field effect transistors (FinFET) were experimentally demonstrated. These devices had complete dimensions of single channel widths (WCh) from 20 nm to 1000 nm and gate lengths (LG) from 100 nm to 2000 nm. Experimental results show that WCh is smaller than 30 nm and LG > WCh, this proposed 5-nm-HZO Si NC-FinFET guarantees SS < 60 mV/decade.
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