{"title":"场效应晶体管阵列中的等离子体振荡","authors":"V. Popov, D. Fateev, M. Shur","doi":"10.1109/MMET.2008.4580905","DOIUrl":null,"url":null,"abstract":"Terahertz (THz) plasmonic spectra of field-effect transistor (FET) arrays are discussed for two different types of FET arrays: (i) FET array with a common channel and a large-area grating gate, and (ii) array of FET units with separate channels and combined intrinsic source and drain contacts. It is shown that the coupling between plasmons and THz radiation in the FET array can be strongly enhanced as compared to a single-unit FET due to excitation of the cooperative plasmon mode distributed over the entire area of the FET array. The higher-order plasmon modes revealing the plasmon resonances at frequencies up to 20 THz can be excited much more effectively in the array of FET units with separate channels and combined source and drain contacts.","PeriodicalId":141554,"journal":{"name":"2008 12th International Conference on Mathematical Methods in Electromagnetic Theory","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Plasma oscillations in field-effect transistor arrays\",\"authors\":\"V. Popov, D. Fateev, M. Shur\",\"doi\":\"10.1109/MMET.2008.4580905\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Terahertz (THz) plasmonic spectra of field-effect transistor (FET) arrays are discussed for two different types of FET arrays: (i) FET array with a common channel and a large-area grating gate, and (ii) array of FET units with separate channels and combined intrinsic source and drain contacts. It is shown that the coupling between plasmons and THz radiation in the FET array can be strongly enhanced as compared to a single-unit FET due to excitation of the cooperative plasmon mode distributed over the entire area of the FET array. The higher-order plasmon modes revealing the plasmon resonances at frequencies up to 20 THz can be excited much more effectively in the array of FET units with separate channels and combined source and drain contacts.\",\"PeriodicalId\":141554,\"journal\":{\"name\":\"2008 12th International Conference on Mathematical Methods in Electromagnetic Theory\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 12th International Conference on Mathematical Methods in Electromagnetic Theory\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MMET.2008.4580905\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 12th International Conference on Mathematical Methods in Electromagnetic Theory","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MMET.2008.4580905","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Plasma oscillations in field-effect transistor arrays
Terahertz (THz) plasmonic spectra of field-effect transistor (FET) arrays are discussed for two different types of FET arrays: (i) FET array with a common channel and a large-area grating gate, and (ii) array of FET units with separate channels and combined intrinsic source and drain contacts. It is shown that the coupling between plasmons and THz radiation in the FET array can be strongly enhanced as compared to a single-unit FET due to excitation of the cooperative plasmon mode distributed over the entire area of the FET array. The higher-order plasmon modes revealing the plasmon resonances at frequencies up to 20 THz can be excited much more effectively in the array of FET units with separate channels and combined source and drain contacts.