场效应晶体管阵列中的等离子体振荡

V. Popov, D. Fateev, M. Shur
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引用次数: 2

摘要

本文讨论了场效应晶体管(FET)阵列的两种不同类型的场效应晶体管(FET)阵列的太赫兹(THz)等离子体谱:(i)具有公共通道和大面积光栅栅极的场效应晶体管阵列,以及(ii)具有单独通道和组合本质源极和漏极触点的场效应晶体管单元阵列。结果表明,与单单元场效应管相比,由于分布在整个场效应管阵列上的协同等离子体模式的激发,场效应管阵列中等离子体激元与太赫兹辐射之间的耦合可以得到强烈增强。在具有单独通道和源极与漏极相结合的FET单元阵列中,可以更有效地激发频率高达20thz的等离子体共振的高阶等离子体模式。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Plasma oscillations in field-effect transistor arrays
Terahertz (THz) plasmonic spectra of field-effect transistor (FET) arrays are discussed for two different types of FET arrays: (i) FET array with a common channel and a large-area grating gate, and (ii) array of FET units with separate channels and combined intrinsic source and drain contacts. It is shown that the coupling between plasmons and THz radiation in the FET array can be strongly enhanced as compared to a single-unit FET due to excitation of the cooperative plasmon mode distributed over the entire area of the FET array. The higher-order plasmon modes revealing the plasmon resonances at frequencies up to 20 THz can be excited much more effectively in the array of FET units with separate channels and combined source and drain contacts.
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