高度热稳定的等离子体聚合BCB聚合物薄膜(k=2.6)，用于铜双砷互连

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852752

J. Kawahara, K. Shiba, M. Tagami, M. Tada, S. Saito, T. Onodera, K. Kinoshita, M. Hiroi, A. Furuya, K. Kikuta, Y. Hayashi

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引用次数: 5

摘要

研制了一种高热稳定性等离子体聚合双苯基硅氧烷双苯并环丁烯(p-BCB)聚合物膜。通过提高沉积温度，p-BCB在400/spl℃以上的热稳定性得到改善，在400/spl℃退火时具有较高的抗Cu扩散能力。降低射频等离子体功率和沉积压力，p-BCB膜的介电常数比传统自旋镀膜的BCB膜小(k=2.7)。p-BCB (k=2.6)/Cu互连表明，与传统的SiO/sub /Al互连相比，CMOS环形振荡器的延迟降低了46%。p-BCB被证明是铜/低钾互连的有力候选材料。

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Highly thermal-stable, plasma-polymerized BCB polymer film (k=2.6) for Cu dual-damascene interconnects

Highly thermal-stable, plasma-polymerized divinyl siloxane bis-benzocyclobutene (p-BCB)-polymer film is developed for Cu dual-damascene interconnects. The thermal stability of p-BCB is improved over 400/spl deg/C by higher deposition temperature, having high resistance to Cu diffusion at 400/spl deg/C-annealing. Lowering the RF plasma-power and the deposition pressure, the p-BCB film has smaller dielectric constant than the conventional spin-coating BCB (k=2.7). The p-BCB (k=2.6)/Cu interconnects reveal 46% delay reduction of CMOS ring oscillator to the conventional SiO/sub 2//Al ones. The p-BCB is proved as a strong candidate for Cu/low-k interconnects.

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2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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