晶圆间键合动力学的多物理场模拟

Nathan Ip, N. Nejadsadeghi, C. Fonseca, Norifumi Kohama, Kimio Motoda
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引用次数: 6

摘要

在半导体晶圆直接键合工艺中,两个硅晶圆在室温条件下通过界面粘附机械连接在一起。沿着键合界面的两个晶圆之间的精确对准对于实现高器件性能至关重要。本文采用固流耦合力学模型研究晶圆键合动力学。对仿真模型的结果进行了详细的研究,并与实验数据进行了比较。该仿真模型证实了空气粘度在晶圆键合过程中的作用。该模型可以帮助优化关键硬件功能,以改善粘合后失真等工艺性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multi-Physics Simulation of Wafer-to-Wafer Bonding Dynamics
In semiconductor direct wafer bonding process, two silicon wafers are mechanically joined together by interfacial adhesion under room conditions. Accurate alignment between the two wafers along the bond interface is critical to achieve high device performances. This paper uses a coupled solid and fluid mechanics simulation model to study the wafer bonding dynamics. The results of this simulation model are studied in detail and compared against experimental data. This simulation model confirms the role of air viscosity in wafer bonding process. This model can help optimize key hardware features to improve process performance such as post-bond distortion.
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