TiO2薄膜在EUV和软x射线区的表征

A. Comisso, A. Giglia, M. Nardello, E. Tessarolo, L. Calvillo, M. Sertsu, G. Granozzi, F. Gerlin, L. Brigo, P. Nicolosi
{"title":"TiO2薄膜在EUV和软x射线区的表征","authors":"A. Comisso, A. Giglia, M. Nardello, E. Tessarolo, L. Calvillo, M. Sertsu, G. Granozzi, F. Gerlin, L. Brigo, P. Nicolosi","doi":"10.1117/12.2178142","DOIUrl":null,"url":null,"abstract":"In this work, three TiO2 thin films with thicknesses of 22.7, 48.5 and 102.9 nm were grown on Si (100) substrates by the technique of electron beam evaporation. The films were deposited at a substrate temperature of 150°C with a deposition rate of 0.3 - 0.5 A/sec. The films thicknesses were characterized by spectroscopic ellipsometry and profilometry. The surface roughness was measured by AFM obtaining RMS of less than 0.7nm. Investigations performed by XPS method have shown that stoichiometric TiO2 was obtained on all the samples with no suboxide presences. Reflectance measurements of the samples were performed in EUV and SX spectral regions from 25.5 to 454.2eV using synchrotron radiation. Analyzing the refractive index N=n+ik of TiO2 thin films, optical constants (n,k) in this energy range were both determined by fitting the Fresnel equations with least-square fitting methods.","PeriodicalId":347374,"journal":{"name":"Europe Optics + Optoelectronics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Characterization of TiO2 thin films in the EUV and soft X-ray region\",\"authors\":\"A. Comisso, A. Giglia, M. Nardello, E. Tessarolo, L. Calvillo, M. Sertsu, G. Granozzi, F. Gerlin, L. Brigo, P. Nicolosi\",\"doi\":\"10.1117/12.2178142\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, three TiO2 thin films with thicknesses of 22.7, 48.5 and 102.9 nm were grown on Si (100) substrates by the technique of electron beam evaporation. The films were deposited at a substrate temperature of 150°C with a deposition rate of 0.3 - 0.5 A/sec. The films thicknesses were characterized by spectroscopic ellipsometry and profilometry. The surface roughness was measured by AFM obtaining RMS of less than 0.7nm. Investigations performed by XPS method have shown that stoichiometric TiO2 was obtained on all the samples with no suboxide presences. Reflectance measurements of the samples were performed in EUV and SX spectral regions from 25.5 to 454.2eV using synchrotron radiation. Analyzing the refractive index N=n+ik of TiO2 thin films, optical constants (n,k) in this energy range were both determined by fitting the Fresnel equations with least-square fitting methods.\",\"PeriodicalId\":347374,\"journal\":{\"name\":\"Europe Optics + Optoelectronics\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Europe Optics + Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2178142\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Europe Optics + Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2178142","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

本文采用电子束蒸发技术在Si(100)衬底上生长了三种厚度分别为22.7、48.5和102.9 nm的TiO2薄膜。薄膜的沉积温度为150℃,沉积速率为0.3 ~ 0.5 a /sec。利用椭偏光谱和轮廓法对膜的厚度进行了表征。采用原子力显微镜测量表面粗糙度,均方根值小于0.7nm。用XPS法进行的研究表明,在没有亚氧化物存在的情况下,所有样品都获得了化学计量TiO2。利用同步辐射对样品在25.5 ~ 454.2eV的EUV和SX光谱区域进行了反射率测量。对TiO2薄膜的折射率N= N +ik进行分析,利用最小二乘拟合方法拟合菲涅耳方程,确定了该能量范围内的光学常数N,k。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization of TiO2 thin films in the EUV and soft X-ray region
In this work, three TiO2 thin films with thicknesses of 22.7, 48.5 and 102.9 nm were grown on Si (100) substrates by the technique of electron beam evaporation. The films were deposited at a substrate temperature of 150°C with a deposition rate of 0.3 - 0.5 A/sec. The films thicknesses were characterized by spectroscopic ellipsometry and profilometry. The surface roughness was measured by AFM obtaining RMS of less than 0.7nm. Investigations performed by XPS method have shown that stoichiometric TiO2 was obtained on all the samples with no suboxide presences. Reflectance measurements of the samples were performed in EUV and SX spectral regions from 25.5 to 454.2eV using synchrotron radiation. Analyzing the refractive index N=n+ik of TiO2 thin films, optical constants (n,k) in this energy range were both determined by fitting the Fresnel equations with least-square fitting methods.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信