L. Wang, S.M. Chen, X. Ning, Z. Chen, J.T. Liu, J.Y. Zhang
{"title":"基于AlN/金刚石层状结构的超高频SAW嵌入式纳米换能器","authors":"L. Wang, S.M. Chen, X. Ning, Z. Chen, J.T. Liu, J.Y. Zhang","doi":"10.1109/ISAF.2017.8000223","DOIUrl":null,"url":null,"abstract":"In this work, we report the development and realization of ultrahigh-frequency, high-performance nano interdigital transducers (n-IDTs) for generation of surface acoustic wave (SAW) on aluminum nitride (AlN)/diamond/Si substrates, where the metal fingers are embedded in the AlN film. The well-defined n-IDTs' resolution down to 200 nm were obtained using electron beam lithography, inductively coupled plasma (ICP) etching and lift-off processing. The fabricated SAW resonators exhibit response at a ultrahigh-frequency range, as high as 9.94 GHz, with stronger intensities of S11 peaks compared with normal transducer devices. The good high-frequency characteristics of the embedded n-IDTs and compatibility with existing fabrication technologies pave the way for the realization of advanced sensors and monolithic integrated MMICs on AlN/diamond/Si substrates for the high frequency and high power applications.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Embedded nanotransducer for ultrahigh-frequency SAW utilizing AlN/diamond layered structure\",\"authors\":\"L. Wang, S.M. Chen, X. Ning, Z. Chen, J.T. Liu, J.Y. Zhang\",\"doi\":\"10.1109/ISAF.2017.8000223\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we report the development and realization of ultrahigh-frequency, high-performance nano interdigital transducers (n-IDTs) for generation of surface acoustic wave (SAW) on aluminum nitride (AlN)/diamond/Si substrates, where the metal fingers are embedded in the AlN film. The well-defined n-IDTs' resolution down to 200 nm were obtained using electron beam lithography, inductively coupled plasma (ICP) etching and lift-off processing. The fabricated SAW resonators exhibit response at a ultrahigh-frequency range, as high as 9.94 GHz, with stronger intensities of S11 peaks compared with normal transducer devices. The good high-frequency characteristics of the embedded n-IDTs and compatibility with existing fabrication technologies pave the way for the realization of advanced sensors and monolithic integrated MMICs on AlN/diamond/Si substrates for the high frequency and high power applications.\",\"PeriodicalId\":421889,\"journal\":{\"name\":\"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2017.8000223\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2017.8000223","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Embedded nanotransducer for ultrahigh-frequency SAW utilizing AlN/diamond layered structure
In this work, we report the development and realization of ultrahigh-frequency, high-performance nano interdigital transducers (n-IDTs) for generation of surface acoustic wave (SAW) on aluminum nitride (AlN)/diamond/Si substrates, where the metal fingers are embedded in the AlN film. The well-defined n-IDTs' resolution down to 200 nm were obtained using electron beam lithography, inductively coupled plasma (ICP) etching and lift-off processing. The fabricated SAW resonators exhibit response at a ultrahigh-frequency range, as high as 9.94 GHz, with stronger intensities of S11 peaks compared with normal transducer devices. The good high-frequency characteristics of the embedded n-IDTs and compatibility with existing fabrication technologies pave the way for the realization of advanced sensors and monolithic integrated MMICs on AlN/diamond/Si substrates for the high frequency and high power applications.
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