32纳米及以上CMOS技术的发展

G. Shahidi
{"title":"32纳米及以上CMOS技术的发展","authors":"G. Shahidi","doi":"10.1109/CICC.2007.4405764","DOIUrl":null,"url":null,"abstract":"Over the last 15 years, there has been a new CMOS technology node approximately every two years. The key feature of every node has been 2X density shrink and ~35% performance gain per technology node. Chip power has been increasing rapidly, approaching air cool limit. Power limit is transforming CMOS scaling to more of a density driver. As we move to 32 nm node and beyond a number of additional fundamental challenges are faced, which may force additional rethinking of how scaling has been done. This paper is an overview of some upcoming challenges and possible ways of addressing them.","PeriodicalId":130106,"journal":{"name":"2007 IEEE Custom Integrated Circuits Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"Evolution of CMOS Technology at 32 nm and Beyond\",\"authors\":\"G. Shahidi\",\"doi\":\"10.1109/CICC.2007.4405764\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Over the last 15 years, there has been a new CMOS technology node approximately every two years. The key feature of every node has been 2X density shrink and ~35% performance gain per technology node. Chip power has been increasing rapidly, approaching air cool limit. Power limit is transforming CMOS scaling to more of a density driver. As we move to 32 nm node and beyond a number of additional fundamental challenges are faced, which may force additional rethinking of how scaling has been done. This paper is an overview of some upcoming challenges and possible ways of addressing them.\",\"PeriodicalId\":130106,\"journal\":{\"name\":\"2007 IEEE Custom Integrated Circuits Conference\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Custom Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2007.4405764\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2007.4405764","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 28

摘要

在过去的15年里,大约每两年就有一个新的CMOS技术节点。每个节点的主要特点是每个技术节点的密度缩小了2倍,性能提高了35%。芯片功率一直在快速增长,接近风冷极限。功率限制正在将CMOS缩放转变为更多的密度驱动器。当我们移动到32nm节点及以后,将面临许多额外的基本挑战,这可能迫使我们重新思考如何进行缩放。本文概述了一些即将面临的挑战以及解决这些挑战的可能方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Evolution of CMOS Technology at 32 nm and Beyond
Over the last 15 years, there has been a new CMOS technology node approximately every two years. The key feature of every node has been 2X density shrink and ~35% performance gain per technology node. Chip power has been increasing rapidly, approaching air cool limit. Power limit is transforming CMOS scaling to more of a density driver. As we move to 32 nm node and beyond a number of additional fundamental challenges are faced, which may force additional rethinking of how scaling has been done. This paper is an overview of some upcoming challenges and possible ways of addressing them.
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