Improvement of ZnO Properties by Ga-doping for Flexible Dye-sensitized Solar Cell Application

This paper intends to explore the effect of Ga concentration in the electrical properties of ZnO photoanode based flexible Dye Sensitized Solar Cell. The structural characterizations indicate that increasing of Ga-doping concentration in ZnO can significantly improves the crystallinity of ZnO photoanode. The electrical conductivity can be recorded using two point probe under dark and light radiation (for a wavelength $\lambda =$ 630 nm). The electrical conductivity was shown to improve with an increase in doping concentration up to 3 % and the activation energy decreases from 0.82 eV to 0.37 eV.