隧道结形成条件下的ii型p-GaAsSb/n-InAs纳米线

2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2018-07-01 DOI:10.1109/NANO.2018.8626325

K. Kawaguchi, T. Takahashi, N. Okamoto, M. Sato, M. Suhara

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引用次数: 2

摘要

采用位置控制气液固法制备了ii型GaAsSb/InAs纳米线。结果表明，随着Sb含量的增加，GaAsSb片段的形状发生了变化。通过控制v族源，获得了满足隧道结标准的GaAsSb段，并在$10^{18}-10^{19}\text{cm}^{-3}$范围内确定了GaAsSb段的p型Zn掺杂。此外，利用扫描电容显微镜技术确定了p-n NWs的导电类型。这些结果为开发适用于垂直纳米隧道器件的NWs提供了良好的前景。

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Type-II p-GaAsSb/n-InAs Nanowires under Conditions for Tunnel Junction Formation

Type-II GaAsSb/InAs nanowires (NWs) were grown using a position-controlled vapor-liquid-solid method. A change in shape of GaAsSb segments with Sb content was revealed. By controlling the group-V sources, GaAsSb segments that satisfied the criteria of tunnel junctions were achieved, and p-type Zn doping for GaAsSb segments was confirmed in the range of $10^{18}-10^{19} \text{cm}^{-3}$. Moreover, conductive type of p-n NWs was confirmed using the scanning capacitance microscopy technique. These results are promising for the development of NWs suitable for vertical nanoscale tunnel devices.

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2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)

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