Parthasarathy Nayak, M. Krishna, K. Vasudevakrishna, K. Hatua
{"title":"研究了寄生电感和器件电容对基于1200v, 35a SiC MOSFET的电压源逆变器设计的影响","authors":"Parthasarathy Nayak, M. Krishna, K. Vasudevakrishna, K. Hatua","doi":"10.1109/PEDES.2014.7042035","DOIUrl":null,"url":null,"abstract":"SiC MOSFET can switch five to ten times faster compared to state of the art Si IGBT. Due to that SiC MOSFET based power converter can be lighter in weight, highly efficient, compact in size compared to Si IGBT based power converters. But the parasitic inductance in the power circuit will not allow SiC MOSFET to switch to its full potential due to very high device voltage overshoot, sustained oscillation in line currents and device voltages, high EMI noise injected in the control circuit etc. Therefore it is very important to know the behavior of the switching characteristics of the device at different parasitic condition. In this paper switching behavior of a 1200V, 35 A, SiC MOSFET is tested extensively in different parasitic condition. A limiting value of these inductances is provided to build a voltage source inverter with SiC MOSFET utilizing its full switching potential.","PeriodicalId":124701,"journal":{"name":"2014 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"42","resultStr":"{\"title\":\"Study of the effects of parasitic inductances and device capacitances on 1200 V, 35 A SiC MOSFET based voltage source inverter design\",\"authors\":\"Parthasarathy Nayak, M. Krishna, K. Vasudevakrishna, K. Hatua\",\"doi\":\"10.1109/PEDES.2014.7042035\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SiC MOSFET can switch five to ten times faster compared to state of the art Si IGBT. Due to that SiC MOSFET based power converter can be lighter in weight, highly efficient, compact in size compared to Si IGBT based power converters. But the parasitic inductance in the power circuit will not allow SiC MOSFET to switch to its full potential due to very high device voltage overshoot, sustained oscillation in line currents and device voltages, high EMI noise injected in the control circuit etc. Therefore it is very important to know the behavior of the switching characteristics of the device at different parasitic condition. In this paper switching behavior of a 1200V, 35 A, SiC MOSFET is tested extensively in different parasitic condition. A limiting value of these inductances is provided to build a voltage source inverter with SiC MOSFET utilizing its full switching potential.\",\"PeriodicalId\":124701,\"journal\":{\"name\":\"2014 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"42\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PEDES.2014.7042035\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PEDES.2014.7042035","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 42
摘要
SiC MOSFET的开关速度比最先进的Si IGBT快5到10倍。由于基于SiC MOSFET的功率转换器与基于Si IGBT的功率转换器相比,重量更轻,效率更高,尺寸更紧凑。但是功率电路中的寄生电感将不允许SiC MOSFET切换到其全部潜力,这是由于非常高的器件电压超调,线电流和器件电压的持续振荡,在控制电路中注入的高EMI噪声等。因此,了解器件在不同寄生条件下的开关特性是非常重要的。本文对一个1200V, 35a的SiC MOSFET在不同寄生条件下的开关性能进行了广泛的测试。提供这些电感的极限值,以利用其全部开关电位构建具有SiC MOSFET的电压源逆变器。
Study of the effects of parasitic inductances and device capacitances on 1200 V, 35 A SiC MOSFET based voltage source inverter design
SiC MOSFET can switch five to ten times faster compared to state of the art Si IGBT. Due to that SiC MOSFET based power converter can be lighter in weight, highly efficient, compact in size compared to Si IGBT based power converters. But the parasitic inductance in the power circuit will not allow SiC MOSFET to switch to its full potential due to very high device voltage overshoot, sustained oscillation in line currents and device voltages, high EMI noise injected in the control circuit etc. Therefore it is very important to know the behavior of the switching characteristics of the device at different parasitic condition. In this paper switching behavior of a 1200V, 35 A, SiC MOSFET is tested extensively in different parasitic condition. A limiting value of these inductances is provided to build a voltage source inverter with SiC MOSFET utilizing its full switching potential.