{"title":"4H-和6h -碳化硅中MOSFET器件特性的温度依赖性","authors":"M. Hasanuzzama, S. Islam, L. Tolbert, M.T. Alam","doi":"10.1109/ISDRS.2003.1272029","DOIUrl":null,"url":null,"abstract":"An analytical model for lateral MOSFET that includes the effects of temperature variation in 4H- and 6H-SiC poly-type is presented in this paper. The model includes the effect of temperature variation on the threshold voltage, the carrier mobility, the body leakage current, and the drain and source contact region resistances. MOSFET device behavior in 4H-SiC is also simulated and compared with 6H-SiC material system.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"44","resultStr":"{\"title\":\"Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC)\",\"authors\":\"M. Hasanuzzama, S. Islam, L. Tolbert, M.T. Alam\",\"doi\":\"10.1109/ISDRS.2003.1272029\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An analytical model for lateral MOSFET that includes the effects of temperature variation in 4H- and 6H-SiC poly-type is presented in this paper. The model includes the effect of temperature variation on the threshold voltage, the carrier mobility, the body leakage current, and the drain and source contact region resistances. MOSFET device behavior in 4H-SiC is also simulated and compared with 6H-SiC material system.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"44\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272029\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC)
An analytical model for lateral MOSFET that includes the effects of temperature variation in 4H- and 6H-SiC poly-type is presented in this paper. The model includes the effect of temperature variation on the threshold voltage, the carrier mobility, the body leakage current, and the drain and source contact region resistances. MOSFET device behavior in 4H-SiC is also simulated and compared with 6H-SiC material system.
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