宽带亚毫米波光谱在硅反转层中的速度超调

1981 International Conference on Submillimeter Waves and Their Applications Pub Date : 1981-12-01 DOI:10.1109/ICSWA.1981.9335081

S. J. Allen, D. Tsui, F. Derosa, K. Thornber, B. A. Wilson

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引用次数: 0

摘要

在加热电场的存在下，通过测量直流和2.5至30 cm“1 (75-900 GHz)范围内的动态电导率，在Si反转层中观察到小的信号速度超调。在频域中直接观察到30%的超调。通过傅里叶变换，在0.5 ~ 6.5 psec的时间尺度上显示了热电子动力学。

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Velocity Overshoot in Silicon Inversion Layers by Broad Band Sub-Millimeter Wave Spectroscopy

Small signal velocity overshoot is observed in a Si inversion layer by measuring the dynamical conductivity at d.c. and from 2.5 to 30 cm”1 (75-900 GHz) in the presence of a heating electric field. An overshoot of 30% is directly observed in the frequency domain. By Fourier transform the hot electron dynamics are displayed on a time scale from .5 to 6.5 psec.

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1981 International Conference on Submillimeter Waves and Their Applications

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