SiGe/BiCMOS/RFCMOS传输线互连特性的晶圆去嵌入研究

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345728

Y. Tretiakov, K. Vaed, D. Ahlgren, J. Rascoe, S. Venkatadri, Wayne H. Woods

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引用次数: 17

摘要

本文比较了不同的片上传输线互连表征的去嵌入技术。主要目标是将去嵌入s参数和提取的电气特性与工业标准电磁求解器的结果进行对比和关联。首次采用简化的“通”技术和新型的“短开”方法对0.1 ~ 70 GHz频段的片上共面波导进行去嵌入。

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On wafer de-embedding for SiGe/BiCMOS/RFCMOS transmission line interconnect characterization

This paper compares different de-embedding techniques for on-wafer transmission line interconnect characterization. The main goal is to contrast and correlate de-embedded S-parameters and extracted electrical characteristics versus industry standard electromagnetic solver results. For the first time the simplified "thru" technique and new "short-open" method are employed for de-embedding on-chip coplanar waveguides over the 0.1-70 GHz frequency bandwidth.

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来源期刊

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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