Haipeng Zhang, Lingling Sun, Lifei Jiang, Lijian Ma, Mi Lin
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引用次数: 3
摘要
本文采用先进的SOI CMOS工艺，利用Silvaco TCAD对具有沟槽栅极和场板沟槽漏的新型结构SOI (Silicon On Insulator) light电池(TGFPTD)进行了工艺模拟。仿真结果表明，采用先进的SOI CMOS技术制备TGFPTD SOI light电池是可行的，垂直栅极nMOSFET的垂直沟道长度可缩短至约170 nm。
Process simulation of Trench Gate and Plate and Trench Drain SOI NLIGBT with TCAD tools
In this paper process simulation of a novel structural Silicon On Insulator (SOI) LIGBT cell with Trench Gate and Field Plate and Trench Drain (TGFPTD) was done in a sequence of advanced SOI CMOS processes with Silvaco TCAD. The simulated results indicate that the proposed TGFPTD SOI LIGBT cell is feasible to be fabricated in advanced SOI CMOS technologies and the vertical channel length of the vertical gate nMOSFET could be reduced to about 170 nm.
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