处理晶圆片表面状况的新方法

Satyajit Shinde, Lawrence Mbonu, H. Ali, Jea Sung Park, Xiao Chen
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引用次数: 2

摘要

最小化晶圆损耗是公司的目标,特别是在竞争激烈的半导体行业。在生产线前端的晶圆表面上多余的水分会导致后续工艺步骤中的缺陷。通常情况下,晶圆片表面暴露在潮湿如高湿度的条件下会导致晶圆片表面污染。在初始处理步骤之后的步骤中解决水分影响,从而最大限度地减少影响周期时间和额外处理成本的任何新步骤的添加。预清洁、衬底氧化和衬底氮化是半导体工业中大多数技术节点的典型初始步骤。在进入生产线之前,大部分工作都是在晶圆表面完成的。本项目重点解决晶圆在预清洁和衬垫氧化处理后衬垫氮化步骤的问题。本文首先研究了晶圆表面的失效模式,然后是消除或减轻入射冲击的方法,最后优化了最小影响的步骤条件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Novel Method to Address Wafer Surface Condition
Minimal wafer loss is the goal of companies particularly in the cut throat semi-conductor industry. Unwanted moisture on the wafer surface at front end of the line can lead to defects in subsequent process steps. Typically, wafer surface exposed to moisture such as high humidity conditions can lead to wafer surface contamination. The moisture effect is addressed at a step which is after the initial processing steps thus minimizing the addition of any new steps affecting cycle time and cost of additional processing. Pre-clean, pad oxide and pad nitride are the typical initial steps of most of the technology nodes in semiconductor industry. Most of the work is done on wafer surface prior to introduction in the production line. This project focuses on addressing it at pad nitride step after the wafer is already processed in pre clean and pad oxide. Initially paper looks at the failure mode on incoming wafer surface, then methodology to eliminate or mitigate the incoming impact and finally optimize the step conditions for minimal impact.
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