K. Yoshioka, Tomohiko Sugimoto, N. Waki, Sinnyoung Kim, Daisuke Kurose, Hirotomo Ishii, M. Furuta, A. Sai, T. Itakura
{"title":"28.7 A, 0.7V, 12b, 160MS/s, 12.8fJ/反阶流式sar ADC, 28nm CMOS,数字放大技术","authors":"K. Yoshioka, Tomohiko Sugimoto, N. Waki, Sinnyoung Kim, Daisuke Kurose, Hirotomo Ishii, M. Furuta, A. Sai, T. Itakura","doi":"10.1109/ISSCC.2017.7870469","DOIUrl":null,"url":null,"abstract":"Wireless standards, e.g. 802.11ac Wave 2 and 802.11ax draft, aim to boost user throughput to cope with growing data traffic. High-speed (fs>100MS/s) and high-resolution (ENOB>9.5b) ADCs are essential for leading-edge wireless SoCs, given the bandwidth and PAPR specifications. Also, low power dissipation (FoM<20fJ/conv) is crucial for mobile applications. A number of pipelined-SAR ADCs have been presented which satisfy these design targets [1–3]. However, in deep submicron CMOS, design of a high DC-gain opamp for the MDAC is a serious obstacle due to reduced intrinsic transistor gain and sub-1V supply voltage. Hence, all designs utilize digital calibration to counter gain error and tolerate the use of a low-gain amplifier. Calibration times of at least several tens of ms are required, resulting in lengthy start-up times and reduced SoC power efficiency. Moreover, such calibration cannot track sudden supply voltage variations and suppressing such fluctuations with bypass capacitors significantly impacts chip cost [1–2]. Furthermore, amplifier non-linearity remains unsolved; with lower supply voltages, the limited amplifier swing tightens SAR noise requirements.","PeriodicalId":269679,"journal":{"name":"2017 IEEE International Solid-State Circuits Conference (ISSCC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"28.7 A 0.7V 12b 160MS/s 12.8fJ/conv-step pipelined-SAR ADC in 28nm CMOS with digital amplifier technique\",\"authors\":\"K. Yoshioka, Tomohiko Sugimoto, N. Waki, Sinnyoung Kim, Daisuke Kurose, Hirotomo Ishii, M. Furuta, A. Sai, T. Itakura\",\"doi\":\"10.1109/ISSCC.2017.7870469\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wireless standards, e.g. 802.11ac Wave 2 and 802.11ax draft, aim to boost user throughput to cope with growing data traffic. High-speed (fs>100MS/s) and high-resolution (ENOB>9.5b) ADCs are essential for leading-edge wireless SoCs, given the bandwidth and PAPR specifications. Also, low power dissipation (FoM<20fJ/conv) is crucial for mobile applications. A number of pipelined-SAR ADCs have been presented which satisfy these design targets [1–3]. However, in deep submicron CMOS, design of a high DC-gain opamp for the MDAC is a serious obstacle due to reduced intrinsic transistor gain and sub-1V supply voltage. Hence, all designs utilize digital calibration to counter gain error and tolerate the use of a low-gain amplifier. Calibration times of at least several tens of ms are required, resulting in lengthy start-up times and reduced SoC power efficiency. Moreover, such calibration cannot track sudden supply voltage variations and suppressing such fluctuations with bypass capacitors significantly impacts chip cost [1–2]. Furthermore, amplifier non-linearity remains unsolved; with lower supply voltages, the limited amplifier swing tightens SAR noise requirements.\",\"PeriodicalId\":269679,\"journal\":{\"name\":\"2017 IEEE International Solid-State Circuits Conference (ISSCC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE International Solid-State Circuits Conference (ISSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2017.7870469\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Solid-State Circuits Conference (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2017.7870469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
28.7 A 0.7V 12b 160MS/s 12.8fJ/conv-step pipelined-SAR ADC in 28nm CMOS with digital amplifier technique
Wireless standards, e.g. 802.11ac Wave 2 and 802.11ax draft, aim to boost user throughput to cope with growing data traffic. High-speed (fs>100MS/s) and high-resolution (ENOB>9.5b) ADCs are essential for leading-edge wireless SoCs, given the bandwidth and PAPR specifications. Also, low power dissipation (FoM<20fJ/conv) is crucial for mobile applications. A number of pipelined-SAR ADCs have been presented which satisfy these design targets [1–3]. However, in deep submicron CMOS, design of a high DC-gain opamp for the MDAC is a serious obstacle due to reduced intrinsic transistor gain and sub-1V supply voltage. Hence, all designs utilize digital calibration to counter gain error and tolerate the use of a low-gain amplifier. Calibration times of at least several tens of ms are required, resulting in lengthy start-up times and reduced SoC power efficiency. Moreover, such calibration cannot track sudden supply voltage variations and suppressing such fluctuations with bypass capacitors significantly impacts chip cost [1–2]. Furthermore, amplifier non-linearity remains unsolved; with lower supply voltages, the limited amplifier swing tightens SAR noise requirements.