{"title":"基于单面反射光学的XUV投影光刻系统设计*","authors":"B. Newnam, V. Viswanathan","doi":"10.1364/sxray.1992.mb2","DOIUrl":null,"url":null,"abstract":"Optical projection lithography using exposure wavelengths less than 100 nm is being developed to produce integrated circuits with feature sizes less than 0.2 µm while providing a total depth of focus (DOF) of ~1 µm. With such short wavelengths, all-reflective projection systems with reflective masks will be required. Since six to seven reflections at normal incidence will be necessary to attain large, diffraction-limited images ≥1 cm2, high mirror reflectance is very important for future high- volume production. As a result, present attempts to develop soft-x-ray projection lithography are focused mainly around 13 nm [1-3] where relatively high reflectance ~60% has been attained with Mo/Si multilayer mirrors.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"XUV Projection Lithography System Design Based on Single-Surface Reflecting Optics*\",\"authors\":\"B. Newnam, V. Viswanathan\",\"doi\":\"10.1364/sxray.1992.mb2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Optical projection lithography using exposure wavelengths less than 100 nm is being developed to produce integrated circuits with feature sizes less than 0.2 µm while providing a total depth of focus (DOF) of ~1 µm. With such short wavelengths, all-reflective projection systems with reflective masks will be required. Since six to seven reflections at normal incidence will be necessary to attain large, diffraction-limited images ≥1 cm2, high mirror reflectance is very important for future high- volume production. As a result, present attempts to develop soft-x-ray projection lithography are focused mainly around 13 nm [1-3] where relatively high reflectance ~60% has been attained with Mo/Si multilayer mirrors.\",\"PeriodicalId\":409291,\"journal\":{\"name\":\"Soft-X-Ray Projection Lithography\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Soft-X-Ray Projection Lithography\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/sxray.1992.mb2\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Soft-X-Ray Projection Lithography","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/sxray.1992.mb2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
XUV Projection Lithography System Design Based on Single-Surface Reflecting Optics*
Optical projection lithography using exposure wavelengths less than 100 nm is being developed to produce integrated circuits with feature sizes less than 0.2 µm while providing a total depth of focus (DOF) of ~1 µm. With such short wavelengths, all-reflective projection systems with reflective masks will be required. Since six to seven reflections at normal incidence will be necessary to attain large, diffraction-limited images ≥1 cm2, high mirror reflectance is very important for future high- volume production. As a result, present attempts to develop soft-x-ray projection lithography are focused mainly around 13 nm [1-3] where relatively high reflectance ~60% has been attained with Mo/Si multilayer mirrors.