具有本质过阻尼Nb/Al-AlOx/Nb (SNIS)结的二分阵列，驱动频率为70 GHz

CPEM 2010 Pub Date : 2010-06-13 DOI:10.1109/CPEM.2010.5543468

V. Lacquaniti, N. De Leo, M. Fretto, A. Sosso, F. Mueller, J. Kohlmann

{"title":"具有本质过阻尼Nb/Al-AlOx/Nb (SNIS)结的二分阵列，驱动频率为70 GHz","authors":"V. Lacquaniti, N. De Leo, M. Fretto, A. Sosso, F. Mueller, J. Kohlmann","doi":"10.1109/CPEM.2010.5543468","DOIUrl":null,"url":null,"abstract":"Binary-divided 1V arrays with 8192 overdamped Nb/Al-AlOx/Nb Josephson junctions, fabricated within a joint cooperation between INRIM and PTB, have been tested at 4.2 K and in a temperature range from 6 to 7 K. We measured the microwave-induced step amplitude and checked the uniformity of junction parameters and microwave response on the whole array and sub-segments.","PeriodicalId":222495,"journal":{"name":"CPEM 2010","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Binary-divided arrays with intrisically overdamped Nb/Al-AlOx/Nb (SNIS) junctions driven at 70 GHz\",\"authors\":\"V. Lacquaniti, N. De Leo, M. Fretto, A. Sosso, F. Mueller, J. Kohlmann\",\"doi\":\"10.1109/CPEM.2010.5543468\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Binary-divided 1V arrays with 8192 overdamped Nb/Al-AlOx/Nb Josephson junctions, fabricated within a joint cooperation between INRIM and PTB, have been tested at 4.2 K and in a temperature range from 6 to 7 K. We measured the microwave-induced step amplitude and checked the uniformity of junction parameters and microwave response on the whole array and sub-segments.\",\"PeriodicalId\":222495,\"journal\":{\"name\":\"CPEM 2010\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CPEM 2010\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CPEM.2010.5543468\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CPEM 2010","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CPEM.2010.5543468","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

由INRIM和PTB联合合作制造的具有8192个过阻尼Nb/Al-AlOx/Nb Josephson结的二元分割1V阵列，已经在4.2 K和6至7 K的温度范围内进行了测试。我们测量了微波诱导阶跃幅值，并检查了整个阵列和子段的结参数和微波响应的均匀性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Binary-divided arrays with intrisically overdamped Nb/Al-AlOx/Nb (SNIS) junctions driven at 70 GHz

Binary-divided 1V arrays with 8192 overdamped Nb/Al-AlOx/Nb Josephson junctions, fabricated within a joint cooperation between INRIM and PTB, have been tested at 4.2 K and in a temperature range from 6 to 7 K. We measured the microwave-induced step amplitude and checked the uniformity of junction parameters and microwave response on the whole array and sub-segments.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

CPEM 2010

自引率

0.00%

发文量