{"title":"GaAs/GaAlAs梯度势垒单量子阱结构相控阵激光器","authors":"Long Zhu","doi":"10.1117/12.2294768","DOIUrl":null,"url":null,"abstract":"A phased array laser made of MOCVD-grown GaAs / GaAlAs graded barrier separate confinement heterostructure single quantum well (GBSC SQW) wafer was investigated. The threshold current of the array composed of ten ridge waveguide lasers was 67mA, linear output power was more than 500mW, and the external differential quantum efficiency was 60%. The configuration of the array is consisted of strongly coupling central region and weakly coupling mirror regions, and the effect of the geometrical configuration of the strongly coupling region on the coupled array supermode was examined.","PeriodicalId":322470,"journal":{"name":"Marketplace for Industrial Lasers","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A phased array laser made of GaAs/GaAlAs graded barrier single quantum well structure\",\"authors\":\"Long Zhu\",\"doi\":\"10.1117/12.2294768\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A phased array laser made of MOCVD-grown GaAs / GaAlAs graded barrier separate confinement heterostructure single quantum well (GBSC SQW) wafer was investigated. The threshold current of the array composed of ten ridge waveguide lasers was 67mA, linear output power was more than 500mW, and the external differential quantum efficiency was 60%. The configuration of the array is consisted of strongly coupling central region and weakly coupling mirror regions, and the effect of the geometrical configuration of the strongly coupling region on the coupled array supermode was examined.\",\"PeriodicalId\":322470,\"journal\":{\"name\":\"Marketplace for Industrial Lasers\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Marketplace for Industrial Lasers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2294768\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Marketplace for Industrial Lasers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2294768","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A phased array laser made of GaAs/GaAlAs graded barrier single quantum well structure
A phased array laser made of MOCVD-grown GaAs / GaAlAs graded barrier separate confinement heterostructure single quantum well (GBSC SQW) wafer was investigated. The threshold current of the array composed of ten ridge waveguide lasers was 67mA, linear output power was more than 500mW, and the external differential quantum efficiency was 60%. The configuration of the array is consisted of strongly coupling central region and weakly coupling mirror regions, and the effect of the geometrical configuration of the strongly coupling region on the coupled array supermode was examined.
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