电感耦合等离子体增强化学气相沉积(ICP-CVD)合成石墨烯层及其光电子学应用

International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA) Pub Date : 2019-11-11 DOI:10.1364/pfe.2019.pw2d.3

A. Thant, D. Jung, Jung‐Yong Lee, Sung‐Yool Choi

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引用次数: 0

摘要

在热蒸发器中，在SiO2/Si(100)衬底上沉积了Ni和Cu薄膜。在C2H2-H2-Ar等离子体真空退火条件下，在Ni-Cu薄膜上生长了石墨烯层。

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Synthesis of Graphene Layers by Inductive Coupled Plasma Enhanced Chemical Vapor Deposition (ICP-CVD) for Application in Optoelectronics

The thin films of Ni and Cu have been deposited on SiO2/Si(100) substrates in a thermal evaporator. The graphene layers have been grown on Ni-Cu films under C2H2-H2-Ar plasma under vacuum annealing condition in ICP-CVD.

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International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA)

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